Siemens Aktiengesellschaft

Infineon Technologies Ag

Thomas Scheiter

Christofer Hierold

Helmut Klose

Markus Biebl

Paul-Werner Von Basse

Ulrich Naher

Josef Willer

Reinhold Noe

Hergen Kapels

Heinz Opolka

Max Steger

Thorsten Sasse

Ralf Catanescu

Robert Aigner

Wolfgang Werner

Walter Gumbrecht

Stefan Kolb

Martin Vossiek

Klaus Abraham-Fuchs

Stephan Marksteiner

Domagoj Siprak

Christian Peters

Michael Melzl

Reinhard Fischbach

Klaus-G&uuml;nter Oppermann

Peter-Christian Eccardt

Hans-J&ouml;rg Timme

Kurt Niederer

Dieter Maier-Schneider

Ulrich Naeher

Gerd Hribernig

Wolfgang Marius

Siegfried Röhl

Thomas K&ouml;lpin

Adrian Berthold

Rainer Grossmann

Andreas Gaymann

Thomas Rosteck

Reinhard G&ouml;llner

Klaus Hammer

Markus Witte

Justin Bierner

A conductor layer is patterned into flat portions, for example of a fingerprint sensor that effects capacitive measurement. The conductor layer is fragmented in a lattice-like manner by cutouts so that an applied passivation layer rests on a base layer that is present beneath the conductor layer. The interlaminar shear strength of the passivation is increased in this way.

Passivation layer structure

An electronic component is described and has a dielectric layer which is constructed on a substrate, conductive surfaces that are constructed on the dielectric layer, and an electrically conductive guard structure. The guard structure is disposed in a plane above the conductive surfaces such that the conductive surfaces are not completely covered by the guard structure.

Electronic component and utilization of a guard structure contained therein

A reference image for pattern recognition tasks is produced. Overlapping individual images are combined to form an overall image and the overall image is used as the reference image. This allows the size of reference images for fingerprints, for instance, which has hitherto been governed by the sensor area, to be increased. The recognition rate can thus be improved.

Method for producing a reference image for pattern recognition tasks

A semiconductor component with passivation includes at least two double passivating layers, of which an uppermost is applied to a planar surface of a layer located therebelow. The double passivating layers include two layers of different dielectric materials, for example silicon oxide and silicon nitride. The respective thicknesses of the individual passivating layers can be adapted to dimensions of the structuring of the layer to which the passivation is applied. This produces a reliable passivation which is particularly suitable for capacitively measuring fingerprint sensors.

Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials

A method is disclosed for producing a micromechanical component. The micromechanical component has sensor holes, wherein at least one component protective layer and/or a spacer coating is applied on the component before separating the wafer into chips. The component protective layer sealingly covers at least the walls of the holes extending parallel to the surface of the wafer and perpendicular to the surface of the wafer and the spacer coating sealingly covers at least the walls of the holes extending parallel to the surface of the wafer.

Micromechanical component protected from environmental influences

A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.

Method for capacitive image acquisition

A spacer layer (,) with a cavity (,) etched out therein and a diaphragm (,) arranged thereabove on the spacer layer are located on a silicon substrate (,) with a doped region (,) formed therein, whereby the doped region and the diaphragm are electrically connected via terminal contacts (,) to electronic components (,) that are likewise integrated in the substrate (,). The electronic component are a component part of the operating circuit that can also be used for the drive of the diaphragm and for evaluating the diaphragm oscillations. The integration makes it possible to arrange the micromachined transducer components as array that can be electronically driven as phased array.

Surface micromachined ultrasonic transducer

Micromechanical sensor

Rotation rate sensor

Semiconductor chip

A capacitance to be measured is connected together with three further capacitances to form a bridge circuit, in which each two of the capacitors are connected in series, and these two series circuits are connected in parallel to one another, and which replaces a part of the input stage of a .SIGMA.-.DELTA. modulator. As inputs of this bridge circuit, terminals are provided at the ends of these series circuits, and as outputs terminals are respectively provided between the capacitors connected one after the other in series. In a sensor realized thereby, two capacitively measuring sensor elements of the same type are used. These capacitors are built into the bridge circuit together with two equally large reference capacitors in such a way that exactly one measurement capacitor and one reference capacitor is La connected is connected to each input and to each output of the bridge circuit.

Capacitively measuring sensor and readout circuit

In a method for manufacturing a combination of a pressure sensor and an electrochemical sensor, a basic structure for an ISFET is manufactured on a substrate made of silicon. After depositing a nitride layer as a pH-sensitive layer, the region of the ISFET is covered with a protective layer. In a region provided for a pressure sensor, a structured layer of polysilicon, provided as a membrane, is manufactured above a hollow space. Additional method steps for manufacturing electrical terminals of the sensors and, if required, additional integrated components, and for manufacturing printed conductor planes, are carried out in the context of a CMOS process. IMOX layers in the region of the gas sensor are wet-chemically removed down to the nitride layer. A platinum contact and an additional protective layer made of a PECVD oxide and a PECVD nitride are deposited. Additional layer structures for the gas sensor are manufactured. The pressure sensor is etched free either before the gas sensor is etched free, or after the deposition of the additional protective layer.

Method for manufacturing a combination of a pressure sensor and an

Pressure sensor

A component having a movable micro mechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.

Micromechanical semiconductor components and manufacturing method

A component having a movable micromechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical terminals of the movable part, the cover layer and doped regions produced in the substrate as a cooperating electrode enable the realization of an acceleration sensor that is easy to mount in a housing.

Micromechanical semiconductor component and manufacturing method therefor

Growing community of inventors

Munich, Germany

Thomas Scheiter