Agere Systems Guardian Corp.

Thomas S Frederick

John Martin McIntosh

Catherine B Vartuli

Thomas Evans Adams

Scott Jessen

A patterned transfer process in the manufacture of a semiconductor device is monitored. Patterned features formed on a semiconductor layer to be etched are scanned for generating a first amplitude modulated waveform intensity signal. The first amplitude modulated waveform intensity signal is sampled to extract a first measurement population of critical dimension measurements. The patterned features are etched and then scanned for generating a second amplitude modulated waveform intensity signal. The second amplitude modulated waveform intensity signal is then sampled to extract a second measurement population of critical dimension measurements, which are then cross-correlated to obtain correlation values of the etching process.

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St. Cloud, FL, United States of America

Thomas S Frederick