Nantero, Inc.

Harvard College

Other

Zeon Corporation

Nanotero, Inc.

Nanatero, Inc.

Thomas Rueckes

Claude Louis Bertin

Brent M Segal

Darren K Brock

Ramesh Sivarajan

Jonathan Wesley Ward

Venkatachalam C Jaiprakash

X M Henry Huang

Rahul Sen

Eliodor G Ghenciu

Mitchell Meinhold

H Montgomery Manning

Steven L Konsek

Bernhard Vogeli

Frank Guo

C Rinn Cleavelin

David A Roberts

J Thomas Kocab

Thierry Yao

Charles M Lieber

Max Strasburg

Ernesto Joselevich

Kevin Kim

Karl M Robinson

Richard Carter

Thomas R Bengtson

Hao-Yu Lin

Michel Pires Monteiro

Peter Austin Burke

John Eugene Berg

Bernard Vogeli

Shiqun Gu

Verne C Hornback

Peter McGrath

Billy J Smith

Colin D Yates

Peter Sites

Tzong-Ru T Han

James Elmer

Bernhard V&ouml;geli

Garo Jacques Derderian

Mark T Ramsbey

Tatsuya Yamaguchi

Harry Luan

Derryl D J Allman

Bruce Joseph Whitefield

Syuji Nozawa

Feng Gu

Christopher L Neville

Steven Konsek

Nagisa Sato

Darlene Hamilton

Joseph James McDermott

Rinn Cleavelin

Thomas Kocab

Tom Kocab

Sushanta K Pal

X M Huang

Xm Henry Huang

XM Henry Huang

The present disclosure provides scalable nanotube fabrics and methods for controlling or otherwise adjusting the nanotube length distribution of a nanotube application solution in order to realize scalable nanotube fabrics. In one aspect of the present disclosure, one or more filtering operations are used to remove relatively long nanotube elements from a nanotube solution until nanotube length distribution of the nanotube solution conforms to a preselected or desired nanotube length distribution profile. In another aspect of the present disclosure, a sono-chemical cutting process is used to break up relatively long nanotube elements within a nanotube application solution into relatively short nanotube elements to realize a pre-selected or desired nanotube length distribution profile.

Scalable nanotube fabrics and methods for making same

A method to fabricate a resistive change element array may include depositing a resistive change material over a substrate and forming a first insulating material over the resistive change material. The method may also include etching a trench in the resistive change material and the first insulating material and forming a cavity in a sidewall of the trench by recessing the resistive change material. The method may further include flowing a conductive material in the cavity and depositing a second insulating material in the trench.

Three-dimensional array architecture for resistive change element arrays and methods for making same

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

Electrostatic discharge protection devices using carbon-based diodes

A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.

Resistive change elements using passivating interface gaps and methods for making same

Methods for making porous nanotube fabrics are disclosed. Within the methods of the present disclosure, a porogen-loaded nanotube application solution is formed by combining a first volume of nanotube elements with a second volume of fuel material in a liquid medium to form a porogen-loaded nanotube application solution. In some aspects of the present disclosure, a third volume of oxidizer material is also combined into the liquid medium. A porogen-loaded nanotube fabric is formed by depositing the porogen-loaded nanotube application solution. In some aspects of the present disclosure, the fuel material within the porogen-loaded nanotube application solution will react with oxidizer material when heat is applied to a sufficient degree and volatize. The off-gassed fuel material will then leave behind voids in the nanotube fabric, rendering the fabric porous.

Methods for forming porous nanotube fabrics

Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

Nonvolatile nanotube switch elements using sidewall contacts

A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance.

Nonvolatile nanotube switches with reduced switching voltages and currents

Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell selection transistors

Methods for scaling dimensions of resistive change elements, resistive change element arrays of scalable resistive change elements, and sealed resistive change elements are disclosed. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements and the resistive change element arrays of scalable resistive change elements reduce the impact of overlapping materials on the switching characteristics of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include sealing surfaces of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include forming barriers to copper migration in a copper back end of the line.

Methods of making sealed resistive change elements

Non-linear resistive change memory cells and arrays

A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.

Microfluidic control surfaces using ordered nanotube fabrics

Double density nonvolatile nanotube switch memory cells

Methods for forming crosspoint arrays of resistive change memory cells

Sealed resistive change elements

Growing community of inventors

Rockport, MA, United States of America

Thomas Rueckes