Tyco Electronics Corporation

Thomas Robert Lally

Timothy Edward Boles

Joel Lee Goodrich

James Garfield Loring, Jr

A method of fabricating a hyperabrupt junction varactor diode structure comprises the steps of forming a non-uniformly doped n-type, hyperabrupt cathode region in a layer of semiconductor material and depositing, by ultra high vacuum chemical vapor deposition (UHVCVD), a p-type anode region onto a surface of the hyperabrupt cathode region. The deposition process is performed at relatively low temperature (i.e., below 600&deg; C.). The anode region and the hyperabrupt cathode are joined at a junction between them such that an impurity concentration level of the hyperabrupt region increases in a direction toward the junction. During the forming step, n-type impurity ions are implanted at an implantation energy level substantially less than 300 keV, preferably between from about 10 to about 70 keV, with the implanted ions being thermally activated at a relatively low temperature (between from about 700 to about 800&deg; C.).

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North Reading, MA, United States of America

Thomas Robert Lally