Continental Automotive Gmbh

Cpt Group Gmbh

Thomas Richter

Claus Zumstrull

Harald Johannes Kastl

Andreas Lenk

Grit KRÜGER

A method of forming an electronic structural element having a stack including first and second electrode layers arranged alternatively with material layers is disclosed. A stack is formed with the first electrode layers projecting beyond a first lateral side of the stack and the second electrode layers spaced radially inward from the first lateral side. A first contacting structure that contacts each first electrode layer is applied directly to the first side of the stack, which contacting structure embeds such the projecting first electrode layers in an electrically conductive manner. A second contacting structure is formed by exposing the first and second electrode layers at a second side of the stack, forming, by an additive method, a solvent-free insulating structure that electrically insulates the first electrode layers, and applying an electrically conductive material over the solvent-free insulating structure to form the second contacting structure that contacts each second electrode layer.

Method for producing an electronic structural element as a stack

A piezo-stack includes a plurality of lateral surfaces and a first passivation layer applied to a first lateral surface. The first passivation layer terminates flush with opposing lateral surfaces that adjoin the first lateral surface.

Piezo-stack with passivation, and a method for the passivation of a piezo-stack

A method is provided for making electrical contact with an electronic component in the form of a stack formed from a plurality of material layers, which react upon application of an electric field, and a plurality of electrode layers, wherein each material layer is arranged between two of the electrode layers. An insulation structure is generated on at least one stack circumferential region of the stack, which exposes each second electrode layer of the at least one stack circumferential region for electrical contact to be made. Also, a contact-making structure is applied to the at least one stack circumferential region which is provided with the insulation structure. Before the step of generating the contact-making structure, the material layers are partially removed by a material-removing method such that the electrode layers are exposed close to the surface.

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Wuppertal, Germany

Thomas Richter