Eastman-kodak Company

Industrial Technology Research Institute

Nitto-denko Corporation

Kent Displays, Inc.

Thomas R Welter

Deepak Shukla

John Texter

David T Southby

Jared B Mooberry

David A Dickinson

Paul B Merkel

Philip T Lau

Krishnan Chari

Jerrold N Poslusny

James Henry Reynolds

David A Steele

Wendy G Ahearn

Thomas H Jozefiak

Keath T Chen

John J Delany

Ronald H Engebrecht

Kevin M Donovan

James Albert Reczek

Mark R Mis

Samir Y Farid

James F Elman

John V Nelson

William R Schleigh

Douglas Robert Robello

Donald R Diehl

David M Teegarden

Kevin P Klubek

Frank D Coms

Charles M Rankin

Harold C Warren

J William Doane

Thomas Joseph Dannhauser

George J Burgmaier

Manju Rajeswaran

David S Bailey

Erica Montbach

James R Schaeffer

Ann L Carroll-Lee

Jeffrey T Carey

Phillip D Knight

Nithya Venkataraman

Robert F Winterkorn

Faraj Abu-Hasanayn

Beata Owczarczyk

A photosensitive reducible silver ion-containing composition can be used to provide electrically-conductive silver metal in thin films or patterns. This composition comprises: a) a non-hydroxylic-solvent soluble silver complex represented by the following formula (I):(Ag)(L)(P)&#x2003;&#x2003; (I)wherein L represents an &#x3b1;-oxy carboxylate; P represents an oxime compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2; b) optionally, a photosensitizer that can either reduce the reducible silver ion or oxidize the &#x3b1;-oxy carboxylate; and c) a solvent medium comprising at least one non-hydroxylic solvent. Electrically-conductive silver can be provided by photochemical conversion of the reducible silver ions in the complex.

Photosensitive compositions containing silver ion &#x3b1;-oxy carboxylate-oxime complexes

A precursor article has a substrate and a photosensitive thin film or a photosensitive thin film pattern on a supporting side. The photosensitive thin film and each photosensitive thin film patterns comprises a non-hydroxylic-solvent soluble silver complex that is represented by the following formula (I):(Ag)(L)(P)&#x2003;&#x2003; (I)wherein L represents an &#x3b1;-oxy carboxylate; P represents a 5- or 6-membered N-heteroaromatic compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. A photosensitizer that can either reduce the reducible silver ion or oxidize the &#x3b1;-oxy carboxylate having a reduction potential can also be present. Such precursor articles can be irradiated with UV-visible radiation to reduce the silver ions to provide electrically-conductive metallic silver in thin films or thin film patterns in product articles or devices.

Articles having reducible silver ion complexes or silver metal

A precursor article has a substrate and a photosensitive thin film or photosensitive thin film pattern on one or both supporting sides. A non-hydroxylic-solvent soluble silver complex is present that is represented by the following formula (I):(Ag)(L)(P)&#x2003;&#x2003; (I)wherein L represents an &#x3b1;-oxy carboxylate; P represents a primary alkylamine; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. A photosensitizer can also be present to enhance photosensitivity for conversion of reducible silver ions to electrically-conductive silver metal in a resulting product article or device. The electrically-conductive silver metal can be provided as a uniform electrically-conductive silver metal-containing thin film or layer, or as one or more electrically-conductive silver metal-containing thin film patterns.

Articles with reducible silver ions or silver metal

A non-hydroxylic-solvent soluble silver complex comprises a reducible silver ion complexed with an &#x3b1;-oxy carboxylate and an oxime compound. The non-hydroxylic-solvent soluble silver complex can be represented by the following formula (I):(Ag)(L)(P)&#x2003;&#x2003; (I)wherein L represents the &#x3b1;-oxy carboxylate; P represents the oxime compound; a is 1 or 2; b is 1 or 2; and c is 1, 2, 3, or 4, provided that when a is 1, b is 1, and when a is 2, b is 2. Such complexes can be incorporated into photosensitive compositions in method to provide thin films or patterns in various articles to provide electrically-conductive silver metal.

Silver ion &#x3b1;-oxy carboxylate-oxime complexes

A liquid crystal composition comprising a chiral dopant compound represented by the following formula: wherein:R1, R2 are independently aryl, alkyl, alkenyl, cycloalkyl, alkoxyaryl, alkaryl or heterocyclic all either substituted or unsubstituted, or combine to form a carbocyclic or heterocyclic ring;R3 and R4 are independently hydrogen, halogen, cyano, alkoxy, NHCOR7, NHSO2R7, COOR7, OCOR7, aryl, alkyl, alkenyl, cycloalkyl, alkoxyaryl, alkaryl or heterocyclic all either substituted or unsubstituted, or combine with either R1 or R2 to form a carbocylic or heterocyclic ring;R5 and R6 are independently hydrogen, CH2, CH, alkyl or aryl either substituted or unsubstituted, COOR7, or combine with L to form a carbocyclic or heterocyclic ring;R7 is aryl, alkyl, alkenyl, cycloalkyl, alkoxyaryl or heterocyclic all either substituted or unsubstituted;L is the non-metallic elements required to form a carbocyclic or heterocyclic ring, or a single bond or a double bond;m is 1-3;n is 0-12.

Tetraoxybiphenyl ester chiral dopants for cholesteric liquid crystal displays

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200&#xb0; C.

Heterocycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N'-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100&#xb0; C.

Configurationally controlled N,N'-Dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors

A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

Heteropyrene-based semiconductor materials for electronic devices and methods of making the same

A thin film transistor comprises a layer of organic semiconductor that comprises an N,N'-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.

N-type semiconductor materials in thin film transistors and electronic devices

The present invention relates to a photoalignable material comprising a photoactive stilbazolium-containing polymer of formula I: wherein, The present invention also relates to a display using a layer of the photoaligned material and methods for aligning the orientation layer as well as orienting a liquid crystal layer applied to the photoaligned orientation layer.

Photoalignment of liquid crystals using poly(vinylstilbazolium) polymers

The present invention relates to a phototunable chiral dopant represented by the following structure: wherein:A, B, C and D are independent divalent groups; X and Z are any independently selected substituent; n is an integer and independently varies from 0 to 3; q is an integer and independently varies from 0 to 5; RNG1 and RNG2 independently represent any ring group; m represents an integer independently varying from 0 to 4; p represents an integer independently varying from 1 to 4; Q independently represents a carbon C&#x2014;R, or nitrogen, wherein Ris independently hydrogen or any substituent. The invention also relates to the use of the dopant in a liquid crystalline composition and a display containing the same, as well as a material composition comprising an enantiomeric excess of one enantiomer of the compound.

Photochemically active chiral compounds and compositions containing the same

The present invention relates to a phototunable chiral dopant represented by the following structure: wherein:

The present invention relates to a chiral compound, and an article utilizing the same, represented by the following structures I-1, I-2, I-3, or 1-4: wherein the chiral compound demonstrates thermochromic temperature insensitivity.

Temperature compensating chiral dopants

Disclosed is a multilayer film comprising a substrate bearing an aligned liquid crystal layer wherein the liquid crystal layer contains a Lewis acid. Such a film is useful for aligning a liquid crystal material to an increased tilt angle.

Aligned liquid crystal layer containing Lewis acids and process for increasing the tilt

The present invention relates to a method for the chemical separation of the enantiomers of 1,1'-spirobiindane-6,6&#x2032;-diol derivatives comprising providing a racemic chiral 1,1&#x2032;-spirobiindane-6,6&#x2032;-diol derivative, reacting a nonracemic chiral component with the racemic chiral 1,1&#x2032;-spirobiindane-6,6&#x2032;-diol derivative to afford a mixture of diastereomeric diesters, separating the mixture of diastereomeric diesters to provide a substantially pure individual diastereomeric diester, and chemically removing the ester groups from the substantially pure individual diastereomeric diester to provide a nonracemic chiral 1,1&#x2032;-spirobiindane-6,6&#x2032;-diol derivative.

Process for preparing enantiomerically pure 1,1'-spirobiindane-6,6&#x2032;-diol derivatives

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Webster, NY, United States of America

Thomas R Welter