The Penn State Research Foundation

Other

Trs Technologies, Inc.

Tektronix, Inc.

Battelle Memorial Institute

Thomas R Shrout

Shujun Zhang

Clive A Randall

Wesley S Hackenberger

Jun Luo

Fei Li

Seung-Eek Park

Kevin A Snook

Raffi Sahul

Timothy Adam Ritter

Chuanying Shen

Hyeong Jae Lee

Scott Lawrence Swartz

Michael T Lanagan

Hue Phuoc Le

Dinesh K Agrawal

James H Adair

Qiming Zhang

Joseph P Dougherty

Jon C Mutton

Susan Trolier-McKinstry

Ronald L Adams

Balasubramaniam Vaidhyanathan

Amanda Lou Baker

L Eric Cross

Gary L Messing

Tomohiro Sogabe

Sei-Joo Jang

Richard J Meyer, Jr

Alfons Kelnberger

Richard Eitel

K Kirk Shung

Long-Qing Chen

Hyuk-Joon Youn

Wei Ren

Ryan Thayer

Dawei Wang

Nathanael Bennink

Tarah M Pecora

Mingfu Zhang

Michael M Mandanas

Shiyi Guo

Kirk Shung

Eugene R Gerber

Qiyue Chia Jiang

Philip M Pruna

Nevin P Sherlock

Kamau Wa Gachigi

Dabin Lin

Patrick D Lopath

Yi Fang

Yeong Lee

A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (PbM){[(M,M)(M,M)]Ti}O, wherein: M is a rare earth cation; Mis selected from the group consisting of Mg, Zn, Yb, Sc, and In; Mis Nb; Mis selected from the group consisting of Mg, Zn, Yb, Sc, In, and Zr; Mis Nbor Zr; 0&#x3c;x&#x2264;0.05; 0.02&#x3c;y&#x3c;0.7; and 0&#x2264;z&#x2264;1, provided that if either Mor Mis Zr, both Mand Mare Zr. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (PbM){[(M,M)(M,M)]Ti}Ofrom the feeding material by a Bridgman method.

Polar nanoregions engineered relaxor-PbTiOferroelectric crystals

Embodiments of the invention can be directed to controlling and/or engineering the size and/or volume of polar nanoregions (PNRs) of ferroelectric polycrystalline material systems. Some embodiments can achieved this via composition modifications to cause changes in the PNRs and/or local structure. Some embodiments can be used to control and/or engineer dielectric, piezoelectric, and/or electromechanical properties of polycrystalline materials. Controlling and/or engineering the PNRs may facilitate improvements to the dielectric, piezoelectric, and/or electromechanical properties of materials. Controlling and/or engineering the PNRs may further facilitate generating a piezoelectric material that may be useful for many different piezoelectric applications.

Perovskite relaxor-PBTI0based ferroelectric ceramics with ultrahigh dielectric and piezoelectric properties through polar nanoregions engineering

A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000&#xb0; C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a dpiezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700&#xb0; C., and a rotated dpiezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d. dand din the same temperature range. The piezoelectric element can also have an electromechanical coupling factor kvariation of less than 7%, and dand rotated dpiezoelectric coefficient variations of less than 5% for temperatures between 25 to 700&#xb0; C. The piezoelectric element can have high electrical resistivity, being on the order of &#x3e;10&#x3a9;&#xb7;cm at 600&#xb0; C. The piezoelectric element can be an ABCOpiezoelectric material with a Fresnoite structure and A=Ca, Sr, Ba, Mg; B&#x2550;Ti, Zr, Hf, V; and C&#x2550;Si, Ge, Sn.

High temperature sensors and transducers

A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000&#xb0; C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a dpiezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700&#xb0; C., and a rotated dpiezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d. dand din the same temperature range. The piezoelectric element can also have an electromechanical coupling factor kvariation of less than 7%, and dand rotated dpiezoelectric coefficient variations of less than 5% for temperatures between 25 to 700&#xb0; C. The piezoelectric element can have high electrical resistivity, being on the order of &#x3e;10&#x3a9;&#xb7;cm at 600&#xb0; C. The piezoelectric element can be an ABCOpiezoelectric material with a Fresnoite structure and A=Ca, Sr, Ba, Mg; B=Ti, Zr, Hf, V; and C=Si, Ge, Sn.

Piezoelectric compounds of the formula xNaBiTiO-yKBiTiO-zLiBiTiO-pBaTiOwhere (0&#x3c;x&#x2266;1), (0&#x2266;y&#x2266;1), (0&#x2266;z&#x2266;1), (0.3&#x2266;m&#x2266;0.7), (0.3&#x2266;n&#x2266;0.7), (0&#x3c;p&#x2266;1) (0.9&#x2266;m/n&#x2266;1.1) as well as to doped variations thereof are disclosed. The material is suitable for high power applications.

NBT based lead-free piezoelectric materials for high power applications

The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.

Temperature and field stable relaxor-PT piezoelectric single crystals

A ternary polycrystalline material based on lead hafnate (PbHfO) and having improved dielectric, piezoelectric, and/or thermal stability properties. The Pb(Hf,Ti)Obased material can exhibit enhanced electromechanical coupling factors when compared to PZT based ceramics and can be used as high performance actuators, piezoelectric sensors and/or ultrasonic transducers. The ternary polycrystalline material can have a perovskite crystal structure with an ABOformula and can be characterized by a substitution of heterovalent acceptor and donor ions at A or B (Zr/Hf) sites.

[object Object]

A &#x3c;110&#x3e; domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(BB)O&#x2014;Pb(B)O, where Bmay be one ion or combination of Mg, Zn, Ni, Sc, In, Yb, Bmay be one ion or combination of Nb, Ta, W, and Bmay be Tior combination of Tiwith Zrand/or Hf.

Relaxor-PT ferroelectric single crystals

Piezoelectric devices with excellent high temperature operation capabilities are described, including piezoelectric sensors and actuators that use a rare earth calcium oxyborate or langanite as the piezoelectric material.

High temperature piezoelectric material

Co-fired multilayer piezoelectric ceramic materials with base metal electrodes based on copper, copper alloy, are found as an effective approach to manufacture low cost multilayer piezoelectrics. The method of the invention is performed at low firing temperature and without the oxidation of base metal or reduction of ceramic components. A variety of ceramic materials may be used and copper is the preferred base metal in the multi-layer piezoelectric devices of the invention. This copper has additional protection against oxidation with a small inorganic coating on the surface. With such protection, the binder and other organics can also be efficiently removed and produce superior performance in the piezoelectric structured devices.

Method of preparing multilayered piezoelectric ceramic material

The present invention is directed to a new family of high Curie temperature, morphotropic phase boundary systems, based on the perovskite solid solution having the general formula (1&minus;x)BiMeO -xPbTiO , where Me is a suitably sized cation or combination of cations and x is a molar fraction. The perovskite systems of the present invention offer room temperature properties analogous to, and high temperature properties superior to, commercially available PZT compositions. The perovskite of this invention exhibits a MPB between the rhombohedral and tetragonal phases. Further dopant strategies may be used for property optimization of the perovskite systems.

Perovskite materials for high temperature and high performance actuators and transducers

The disclosed invention relates to Bi O &mdash;ZnO&mdash;Ta O dielectric compounds and compositions, and to their manufacture. The compounds of the invention have outstanding K, Q, TCF, and TCC. Examples of these properties include a K of between 58 and 80, a low dielectric loss (tan &dgr;<0.003), and a TCC<30 ppm/&deg; C. Ceramic compositions produced include those represented by Bi (ZnTa ) O where 0.57&lE;x&lE;1.0, Bi (ZnTa ) O where 1.0&lE;y&lE;3.0, as well as by Bi (ZnTa ) O where 1.0&lE;y&lE;3.0 with the proviso that y is not&equals;2.0. Solid solutions of compounds defined by the formula r(Bi (Zn Ta ) O )-(1&minus;r)(Bi Zn )(Zn Ta )O )) where 0<r<1 also are produced.

Bismuth pyrochlore microwave dielectric materials

The present invention discloses a method and apparatus for ultrasound imaging with improved spatial sampling. The device includes a plurality of ultrasound imaging elements each having a pitch defined by the center to center spacing of the ultrasound imaging elements; and a motion mechanism operatively connected to the plurality of ultrasound imaging elements and adapted to move the plurality of ultrasound imaging elements over a distance to increase the spatial sampling of the plurality of ultrasound imaging elements. The method of the present invention includes transducing a signal from one or multiple ultrasound imaging elements within an array of ultrasound imaging elements; moving the array of ultrasound imaging elements a distance less than the pitch; and transducing at least one additional signal from the ultrasound imaging element.

High frequency synthetic ultrasound array incorporating an actuator

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Pennsylvania Furnace, PA, United States of America

Thomas R Shrout