L-3 Communications Corporation

Raytheon Company

Lockheed Martin Corporation

Loral Vought Systems Corporation

Other

Westinghouse Electric Corporation

Thomas R Schimert

Roland W Gooch

Athanasios John Syllaios

William L McCardel

Dayton D Eden

William E Case

John F Brady

Edward G Meissner

Richard C McKee

Thomas P Fagan, Iii

Howard R Beratan

Charles M Hanson

John H Tregilgas

Austin J Brouns

Sandra L Baumler

Kevin Soch

Michael F Taylor

Leslie L Thompson

James H McCurdy

Thomas A Shafer

Scott L Barnes

Bobbi A Ritchey

Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.

Pixel-level optical elements for uncooled infrared detector devices

Optically transitioning pixel-level filtering using a multi-level structure that includes an isolated optically transitioning filter element that is suspended over a corresponding radiation detector element in a one-to-one relationship to provide, for example, one or more features such as spectral detection and/or selective radiation immunity.

Pixel-level optically transitioning filter elements for detector devices

Systems and methods for color correcting radiation by alternately focusing a first radiation spectrum on a first radiation spectrum detector, and then focusing at least one additional radiation spectrum on at least one additional radiation spectrum detector.

Color correction for radiation detectors

Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

Microbolometer infrared detector elements and methods for forming same

Infrared detector elements and methods for forming infrared detector elements in which the top metal layer of CMOS circuitry of the detector element is employed as a lead metal reflector for the infrared detector.

Infrared detector elements and methods of forming same

Systems and methods for bonding semiconductor devices and/or multiple wafers, in the form of a first segmented wafer and a second unsegmented wafer which may have different temperature coefficients of expansion (TCE), and which may be bonded together, with or without the presence of a vacuum.

Systems and methods for bonding

Systems and methods for providing multi-spectral image capability using an integrated multi-band focal plane array that, in one example, may be employed to simultaneously image in the visible spectrum and infrared spectrum using an integrated dual-band focal plane array, e.g., by including visible imaging circuitry within read out integrated circuitry (ROIC) used to readout infrared detector elements within the same pixel element/s.

Systems and methods for integrating focal plane arrays

Methods for making optically blind reference pixels and systems employing the same. The reference pixels may be configured to be identical to, or substantially identical to, the active detector elements of a focal plane array assembly. The reference pixels may be configured to use the same relatively longer thermal isolation legs as the active detector pixels of the focal plane, thus eliminating joule heating differences. An optically blocking structure may be placed in close proximity directly over the reference pixels.

Optically blocked reference pixels for focal plane arrays

A method for manufacturing optically-transparent lids includes etching sub-wavelength structures on a surface of a lid wafer. The structures may be arrayed in a hexagonally closed-packed pattern.

Sub-wavelength structures for reduction of reflective properties

A method for manufacturing integrated circuit device lids includes creating a lid cavity on the surface of a lid wafer, forming a sealing surface on the lid wafer that surrounds the lid cavity, and forming a trench on the lid wafer between the lid cavity and the sealing surface. The resulting structure uptakes excess sealing surface material and prevents such material from entering the lid cavity.

Vacuum package fabrication of integrated circuit components

An infrared detector ( ) includes a substrate ( ) having thereon an array of detector elements ( ). Each detector element has a membrane ( ), which includes an amorphous silicon layer ( ) in contact with at least two electrodes ( ) that are made of a titanium/aluminum alloy which absorbs infrared radiation. In order to obtain a desired temperature coefficient of resistance (TCR), the amorphous silicon layer may optionally be doped. The effective resistance between the electrodes is set to a desired value by appropriate configuration of the electrodes and the amorphous silicon layer. The membrane includes two outer layers ( ) made of an insulating material. Openings ( ) may optionally be provided through the membrane.

Infrared detector with amorphous silicon detector elements, and a method of making it

A microbolometer is provided that includes an absorber element having material properties to change temperature in response to absorbing infrared radiation. An amorphous silicon detector is thermally coupled to the absorber element and is suspended above a silicon substrate at a height of one-quarter wavelength of the infrared radiation to be detected. The amorphous silicon detector changes electrical resistance in response to the absorber element changing temperature. The microbolometer also includes electrode arms coupled to the silicon substrate to provide structural support for the amorphous silicon detector above the surface of the silicon substrate. The electrode arms further provide electrical connectivity for the microbolometer.

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Ovilla, TX, United States of America

Thomas R Schimert