Avogy, Inc.

Nexgen Power Systems, Inc.

Agovy, Inc.

Thomas R Prunty

Isik C Kizilyalli

Hui Nie

David P Bour

Linda T Romano

Andrew Paul Edwards

Richard J Brown

Madhan M Raj

Dave P Bour

Mahdan Raj

Gangfeng Ye

Quentin Diduck

Donald Ray Disney

Ozgur Aktas

A method of fabricating an electronic device includes providing a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the &#x3c;0001&#x3e; direction of between 0.15&#xb0; and 0.65&#xb0;. The method also includes growing a first III-V epitaxial layer coupled to the III-V substrate and growing a second III-V epitaxial layer coupled to the first III-V epitaxial layer. The method further includes forming a first contact in electrical contact with the III-V substrate and forming a second contact in electrical contact with the second III-V epitaxial layer.

High power gallium nitride electronics using miscut substrates

A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.

Method and system for in-situ etch and regrowth in gallium nitride based devices

A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer.

Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer

A gallium nitride (GaN)-based junction field-effect transistor (JFET) can include a GaN drain region having a top surface extending in a lateral dimension, a source region, and a GaN channel region of a first conductivity type coupled between the source region and the GaN drain region and operable to conduct electrical current between the source region and the GaN drain region. The JFET can also include a blocking layer disposed between the source region and the GaN drain region such that the GaN channel region is operable to conduct the electrical current substantially along the lateral dimension in a laterally-conductive region of the GaN channel region, and a GaN gate region of a second conductivity type coupled to the GaN channel region such that the laterally-conductive region of the GaN channel region is disposed between at least a portion of the blocking layer and the GaN gate region.

Lateral GaN JFET with vertical drift region

A Schottky diode and method of fabricating the Schottky diode using gallium nitride (GaN) materials is disclosed. The method includes providing an n-type GaN substrate having first and second opposing surfaces. The method also includes forming an ohmic metal contact electrically coupled to the first surface, forming an n-type GaN epitaxial layer coupled to the second surface, and forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer. The AlGaN surface layer has a thickness which is less than a critical thickness, and the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer. The method also includes forming a Schottky contact electrically coupled to the n-type AlGaN surface layer, where, during operation, an interface between the n-type GaN epitaxial layer and the n-type AlGaN surface layer is substantially free from a two-dimensional electron gas.

GaN-based Schottky barrier diode with algan surface layer

An electronic device includes a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the &#x3c;0001&#x3e; direction of between 0.15&#xb0; and 0.65&#xb0;. The electronic device also includes a first epitaxial layer coupled to the III-V substrate and a second epitaxial layer coupled to the first epitaxial layer. The electronic device further includes a first contact in electrical contact with the substrate and a second contact in electrical contact with the second epitaxial layer.

A method of making an edge terminated semiconductor device includes providing a GaN substrate having a GaN epitaxial layer grown thereon and exposing a portion of the GaN epitaxial layer to ion implantation. The energy dose is selected to provide a resistivity that is at least 90% of maximum achievable resistivity. The method also includes depositing a conductive layer over a portion of the implanted region.

Edge termination by ion implantation in gallium nitride

A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, a gate region at least partially surrounding the channel region, having a first surface coupled to the drift region and a second surface on a side of the gate region opposing the first surface, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction, and the channel region extends along at least a portion of the second surface of the gate region.

Method and system for a GaN vertical JFET utilizing a regrown channel

A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.

Method and system for diffusion and implantation in gallium nitride based devices

A method of growing a III-nitride-based epitaxial structure is disclosed. The method includes forming a GaN-based drift layer coupled to the GaN-based substrate, where forming the GaN-based drift layer comprises doping the drift layer with indium to cause the indium concentration of the drift layer to be less than about 1&#xd7;10cmand to cause the carbon concentration of the drift layer to be less than about 1&#xd7;10cm. The method also includes forming an n-type channel layer coupled to the GaN-based drift layer, forming an n-contact layer coupled to the GaN-based drift layer, and forming a second electrical contact electrically coupled to the n-contact layer.

Method and system for doping control in gallium nitride based devices

A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.

Method and system for floating guard rings in gallium nitride materials

A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.

Schottky diode with buried layer in GaN materials

A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

Growing community of inventors

Santa Clara, CA, United States of America

Thomas R Prunty