Micron Technology Incorporated

Tokyo Electron Limited

Thomas R Omstead

Cole S Franklin

Deepak Vedhachalam

Ke-Hung Chen

A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.

Methods of forming silicon-containing dielectric materials and methods of forming a semiconductor device comprising nitrogen radicals and oxygen-containing, silicon-containing, or carbon-containing precursors

Semiconductor device structures including silicon-containing dielectric materials

Described herein are architectures, platforms and methods for detecting and analyzing anomalous events (i.e., arcing events) from spectral data gathered during a wafer fabrication process.

Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process

Methods of forming silicon-containing dielectric materials and semiconductor device structures

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Boise, ID, United States of America

Thomas R Omstead