Air Products and Chemicals, Inc.

The Standard Oil Company

Entegris, Inc.

Other

Thomas R Gaffney

Manchao Xiao

Charles G Coe

Steven Gerard Mayorga

Johan Adriaan Martens

Hong-Xin Li

Pierre A Jacobs

Jeffrey Richard Brzozowski

Yanliang Xiong

Xinjian Lei

Hareesh Thridandam

Ravi Kumar

John N Armor

Michael J Desmond

John F Kirner

Robert George Syvret

Thomas Stephen Farris

Joshua T Cook

Thomas Albert Braymer

Robin Joyce Maliszewskyj

Stenio Da Costa Pereira

Daimhin Paul Murphy

Abneesh Srivastava

JoAnn Henry

Timothy Christopher Golden

William Paul Schmidt

Scott Jeffrey Weigel

Gauri Sankar Lal

Mark L Listemann

Ronald Martin Pearlstein

Eugene Joseph Karwacki, Jr

Shankar Nataraj

Ronald Pierantozzi

Jeffrey Raymond Hufton

Philip Bruce Henderson

Brian Keith Peterson

Gene Everad Parris

Hansong Cheng

Frederick Carl Wilhelm

Fred William Taylor

Heather Regina Bowen

Liu Yang

Daniel Joseph Tempel

Peter K Shogren

Alejandro L Cabrera

Rajagopalan S Srinivasan

Brian Thomas Carvill

James Edward Mac Dougall

Chenggang Zhou

Jinping Wu

Peter K Shorgen

Mildred A Miller

Brent A Aufdembrink

The invention relates to a gas purifier that removes moisture and oxygen from inert gases and reducing gases, for example, at sub-atmospheric pressures. The purifier can remove part per million levels of moisture in a gas stream to less than 100 parts per trillion by volume, and has a low pressure drop and a sharp breakthrough curve.

Gas purifier

The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si&#x2014;H, preferably of the formula (RRN)SiHwherein Rand Rare selected independently from Cto Cand a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stress as compared to films from thermal chemical vapor deposition.

Plasma enhanced cyclic chemical vapor deposition of silicon-containing films

Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process.

Tellurium (Te) precursors for making phase change memory materials

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):(RRN)SiR&#x2003;&#x2003;(I)wherein substituents Rand Rare each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents Rand Rcomprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO, PO(OR), OR, SO, SO, SOR and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, Ris chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Precursors for depositing silicon-containing films and methods for making and using same

The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

Tellurium precursors for GST films in an ALD or CVD process

The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas:  The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

Process for producing silicon oxide films for organoaminosilane precursors

A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si&#x2014;Hfragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more HSi&#x2014;NR(R&#x2550;SiH, R, Ror R, defined below) groups selected from the group consisting of one or more of: wherein R and Rin the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and Rin formula A also being combinable into a cyclic group, and Rrepresenting a single bond, (CH), a ring, or SiH, and purging away the unreacted silicon-containing source.

Cyclic chemical vapor deposition of metal-silicon containing films

This invention relates to an improvement in a low-pressure storage and delivery system for gases having Lewis basicity, particularly hazardous specialty gases such as phosphine and arsine, which are utilized in the electronics industry. The improvement resides in storing the gases in a liquid incorporating a reactive compound having Lewis acidity capable of effecting a reversible reaction between a gas having Lewis basicity. The reactive compound comprises a reactive species that is dissolved, suspended, dispersed, or otherwise mixed with a nonvolatile liquid.

Liquid media containing Lewis acidic reactive compounds for storage and delivery of Lewis basic gases

The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane

The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a neutral to weakly acidic polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor. A free radical scavenger can also be included in the process and composition.

A cyclic process for operating an equilibrium controlled reaction in a plurality of reactors containing an admixture of an adsorbent and a reaction catalyst suitable for performing the desired reaction which is operated in a predetermined timed sequence wherein the heating and cooling requirements in a moving reaction mass transfer zone within each reactor are provided by indirect heat exchange with a fluid capable of phase change at temperatures maintained in each reactor during sorpreaction, depressurization, purging and pressurization steps during each process cycle.

Process for operating equilibrium controlled reactions

Adsorption of carbon dioxide from gas streams at temperatures in the range of 300 to 500&deg; C. is carried out with a solid adsorbent containing magnesium oxide, preferably promoted with an alkali metal carbonate or bicarbonate so that the atomic ratio of alkali metal to magnesium is in the range of 0.006 to 2.60. Preferred adsorbents are made from the precipitate formed on addition of alkali metal and carbonate ions to an aqueous solution of a magnesium salt. Atomic ratios of alkali metal to magnesium can be adjusted by washing the precipitate with water. Low surface area adsorbents can be made by dehydration and CO,removal of magnesium hydroxycarbonate, with or without alkali metal promotion. The process is especially valuable in pressure swing adsorption operations.

Carbon dioxide adsorbents containing magnesium oxide suitable for use at high temperatures

A pressure swing adsorption process for absorbing CO.sub.2 from a gaseous mixture containing CO.sub.2 comprising introducing the gaseous mixture at a first pressure into a reactor containing a modified alumina adsorbent maintained at a temperature ranging from 100.degree. C. and 500.degree. C. to adsorb CO.sub.2 to provide a CO.sub.2 laden alumina adsorbent and a CO.sub.2 depleted gaseous mixture and contacting the CO.sub.2 laden adsorbent with a weakly adsorbing purge fluid at a second pressure which is lower than the first pressure to desorb CO.sub.2 from the CO.sub.2 laden alumina adsorbent. The modified alumina adsorbent which is formed by depositing a solution having a pH of 3.0 or more onto alumina and heating the alumina to a temperature ranging from 100.degree. C. and 600.degree. C., is not degraded by high concentrations of water under process operating conditions.

Carbon dioxide pressure swing adsorption process using modified alumina

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Allentown, PA, United States of America

Thomas R Gaffney