Infineon Technologies Ag

Thomas Popp

Peter Irsigler

Bernhard Winkler

Klemens Pruegl

Thomas Grille

Bernhard Jakoby

Thomas Krotscheck Ostermann

Rudolf Berger

Ursula Hedenig

Stefan Pompl

Raimund Foerg

Roland Meier

Ventsislav M Lavchiev

Stefan Clara

Thoralf Kautzsch

Mirko Vogt

Maik Stegemann

Henning Feick

Heiko Froehlich

Stefano Parascandola

Andre Roeth

Olga Khvostikova

A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

Method of generating a germanium structure and optical device comprising a germanium structure

Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Membrane structures for microelectromechanical pixel and display devices and systems, and methods for forming membrane structures and related devices

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8&#xd7;10quantum structures per cm. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 &#x3bc;m and 10 &#x3bc;m or to absorb light with a light absorption maximum at a wavelength of between 2 &#x3bc;m and 10 &#x3bc;m.

Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer.

Trench capacitors and methods of forming the same

A method for manufacturing a marked single-crystalline substrate comprises providing a single-crystalline substrate comprising a first material, the single-crystalline substrate having a surface area; forming a marking structure on the surface area of the single-crystalline substrate, wherein the marking structure comprises a first semiconductor material; and depositing a semiconductor layer on the marking structure and at least partially on the surface area of the single-crystalline substrate, wherein the semiconductor layer comprises the second semiconductor material, and wherein the marking structure is buried under the second semiconductor material.

Method for manufacturing a marked single-crystalline substrate and semiconductor device with marking

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Falkenstein, Germany

Thomas Popp