Fairchild Semiconductor Corporation

Thomas P Welch

Michael D Gruenhagen

Eric J Woolsey

Steven Paul Sapp

Bruce Douglas Marchant

Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.

Die backside standoff structures for semiconductor devices

A semiconductor substrate is provided that exhibits very low substrate resistance while also providing structural integrity and robustness to resist breakage during manufacturing. The invention also provides methods of making these semiconductor substrates. The semiconductor substrate includes a planar surface and a recess extending below the planar surface. Preferred substrates include a plurality of recesses arranged in an array.

Growing community of inventors

South Jordan, UT, United States of America

Thomas P Welch