Freescale Semiconductor,inc.

Motorola Corporation

Thomas P Remmel

Melvy Freeland Miller, Iii

Peter Zurcher

Sriram Kalpat

Melvy F Miller

A method of making a semiconductor device includes the steps of: providing a semiconductor substrate () having a patterned interconnect layer () formed thereon; depositing a first dielectric material () over the interconnect layer; depositing a first electrode material () over the first dielectric material; depositing a second dielectric material () over the first electrode material; depositing a second electrode material () over the second dielectric material; patterning the second electrode material to form a top electrode () of a first capacitor (); and patterning the first electrode material to form a top electrode () of a second capacitor (), to form an electrode () of the first capacitor, and to define a resistor ().

Semiconductor device comprising passive components

A method of making a semiconductor device includes the steps of: providing a semiconductor substrate () having a patterned interconnect layer () formed thereon; depositing a first dielectric material () over the interconnect layer; depositing a first electrode material () over the first dielectric material; depositing a second dielectric material () over the first electrode material; depositing a second electrode material () over the second dielectric material; patterning the second electrode material to form a top electrode () of a first capacitor (); and patterning the first electrode material to form atop electrode () of a second capacitor (), to form an electrode () of the first capacitor, and to define a resistor ().

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Mesa, AZ, United States of America

Thomas P Remmel