Stmicroelectronics International N.v.

Stmicroelectronics France

Thomas Oheix

Matthieu Nongaillard

The disclosure concerns an electronic assembly which extends along a stacking direction from a lower surface to an upper surface coupled by an edge surface, the assembly comprises at least two elementary modules stacked along the stacking direction, which each comprise, along the stacking direction and from a back side to a front side, two high electron mobility transistors respectively called back transistor and front transistor, separated by an insulator layer, and having in common a source electrode, a drain electrode, and a gate electrode, the assembly of the front and back transistors being electrically connected in parallel, the electronic assembly comprises, arranged on the front side of each elementary module, a contact layer, electrically contacting the gate electrode of the considered elementary module from its front side, each of the contact layers comprising an electric contact point emerging onto the edge surface.

Electronic assembly provided with a plurality of high electron mobility transistors

The disclosure concerns an electronic device comprising, stacked from a first surface to a second surface, a first stack and a second stack of two high electron mobility transistors, referred to as first and second transistor, the first and the second stack each comprising, from an insulating layer, interposed between the first and the second stack, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first and a second set of electrodes, the first and the second set of electrodes being each provided with a source electrode, with a drain electrode, and with a gate electrode which are arranged so that the first and the second transistor form a half-arm of a bridge.

Electronic device provided with a stack of two high electron mobility transistors arranged in a bridge half-arm

The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.

Electronic device comprising two high electron mobility transistors

An enhancement-mode high-electron-mobility transistor comprises a structure including a stack made of III-V semiconductor materials defining an interface and capable of forming a conduction layer in the form of a two-dimensional electron gas layer; a source electrode and a drain electrode forming an electrical contact with the conduction layer; and a gate electrode arranged on top of the structure, between the source electrode and the drain electrode. The structure comprises a bar that is arranged below the gate electrode and passes through the interface of the stack. The bar comprises two semiconductor portions exhibiting opposite types of doping, defining a p-n junction in proximity to the interface.

Enhancement-mode high-electron-mobility transistor

The disclosure concerns a device which comprises a stack of two high electron mobility transistors, referred to as first and second transistor, separated by an insulating layer and each provided with a stack of semiconductor layers respectively referred to as first stack and second stack, the first and the second stack each comprising, from the insulating layer to, respectively, a first and a second surface, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first set of electrodes and a second set of electrodes, the first and the second set of electrodes each comprising a source electrode, a drain electrode, and a gate electrode which are arranged so that the first and the second transistor are electrically connected head-to-tail.

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GRENOBLE, France

Thomas Oheix