Infineon Technologies Ag

Thomas Nuebel

Reinhold Spanke

Georg Borghoff

Guido Strotmann

Oliver Schilling

Marianna Nomann

Mark Essert

Torsten Groening

Martin Woelz

A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the substrate, which together with the substrate encloses the one or more power semiconductor dies, a plurality of power terminals attached to the first main face of the substrate at a first end, and extending through the plastic housing at a second end to provide a point of external electrical connection for the one or more power semiconductor dies, a potting compound embedding the one or more power semiconductor dies, the first main face of the substrate and at least part of the first end of the plurality of power terminals, and an insulative coating applied only to parts of the plurality of power terminals disposed inside the plastic housing and in contact with just air. A corresponding method of manufacture also is provided.

Power semiconductor module with partially coated power terminals and method of manufacturing thereof

One aspect of the invention relates to a method for producing a circuit carrier. For this purpose, an electrically insulating carrier is provided, having an upper side and also an underside opposite from the upper side. A first metal foil and a hardening material are likewise provided. Then, an upper metallization layer, which is arranged on the upper side and has a hardening area, is produced. In this case, at least one contiguous portion of the hardening area is created by at least part of the hardening material being diffused into the first metal foil.

Method for producing a circuit carrier and for connecting an electrical conductor to a metallization layer of a circuit carrier

A method for reducing variations in the bending of rolled metal base plates for semiconductor modules is disclosed. In this method, the base plates are rolled in their longitudinal direction in a specific manner.

Method for reducing variations in the bending of rolled base plates and semiconductor module having such a base plate sensor

The power semiconductor module () has a heat-conducting base plate () on which at least three substrates () are placed, each substrate supporting at least one power semiconductor component () that gives off heat generated during operation. In order to optimize a power semiconductor module of this type with regard to mechanical load and heat dissipation, the substrates () are placed on the base plate () while being arranged in a single row (), and pressing devices (), which are situated close to the substrate, are provided on both longitudinal sides () of the base plate () while being arranged parallel to the row (). The base plate can be pressed against a cooling surface by the pressing devices.

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Warstein, Germany

Thomas Nuebel