Flisom Ag

Other

Thomas Netter

Roger Ziltener

Reto Pfeiffer

Louis Schar

Roland Kern

John Oldridge

Patric Luethi

Alexander Meeder

A photovoltaic apparatus is provided including a back sheet and a photovoltaic device disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells extending in a first direction; and a plurality of serial interconnects having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet disposed over the photovoltaic device, the front sheet having a plurality of structures, wherein each structure has one or more edges aligned with one of the serial interconnects.

Structuring of a photovoltaic apparatus

A photovoltaic apparatus () is provided including a front sheet () having a first portion () and a second portion (). The photovoltaic apparatus further includes a back sheet () having a first portion (), a second portion (), and a first folded portion (), where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further includes one or more photovoltaic devices () disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic cells ().

Photovoltaic apparatus and assembly

A photovoltaic apparatus is provided including a first portion having a first surface facing a first direction; a second portion located in a different position in the first direction from the first portion; and a third portion located in a different position in the first direction from the first portion; a front sheet and a back sheet each extending at least partially through each of the first portion, the second portion, and the third portion. The photovoltaic apparatus further includes a first rigid folded portion connecting the first portion to the second portion, the first rigid folded portion including portions of the front sheet and the back sheet; and a second rigid folded portion connecting the first portion to the third portion, the second rigid folded portion including portions of the front sheet and the back sheet.

Photovoltaic assembly

An apparatus for detecting a rotation angle, comprising: an annular stator around an axis of revolution Z, comprising: at least a first pole, a second pole, and a third pole arranged at constant azimuthal intervals around the axis of revolution of the annular stator, each of the poles comprising one or more electrical windings, and each of the poles comprising a flange that is a portion of a first surface of revolution around the annular stator's axis of revolution, the flange having an area distribution substantially that, within a coordinate system, of a sin(&#x3b1;) function from a low &#x3b1; bound of about 0 radians to a high &#x3b1; bound of about &#x3c0; radians. The apparatus may comprise a rotor that comprises sectors having the azimuthal extent of one flange and having different magnetic permeabilities. Methods for forming the apparatus and for obtaining measurements are also presented.

Apparatus and method for a rotation angle detector

A photovoltaic apparatus () is provided including a back sheet () and a photovoltaic device () disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells (-) extending in a first direction; and a plurality of serial interconnects () having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet () disposed over the photovoltaic device, the front sheet having a plurality of structures (), wherein each structure has one or more edges () aligned with one of the serial interconnects.

A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.

Method for thin-film via segments in photovoltaic device

A thin-film optoelectronic module device () and design method comprising at least three monolithically-interconnected cells () where at least one monolithically-interconnecting line () depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device () presents at least one set of at least three zones () having curves of substantially parallel monolithic interconnect lines. Border zones () have a lower front-contact sheet resistance than that of internal zone (). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (). The device () and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices () while increasing production yield, reliability, aesthetic appearance, and range of applications.

Thin-film photovoltaic device with wavy monolithic interconnects

A method for vias and monolithic interconnects in thin-film optoelectronic devices () wherein at least one line segment via hole () is formed by laser drilling and passes through front-contact layers () and semiconductive active layer (), and wherein laser drilling causes forming a CIGS-type wall () of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface () of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (), forming a bump-shaped raised portion () at the surface of the front-contact layer, forming a raised portion () of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy () covering a portion of the front-contact layer (). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.

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Winterthur, Switzerland

Thomas Netter