Infineon Technologies Ag

Infineon Technologies Austria Ag

Thomas Neidhart

Hans-Joachim Schulze

Matthias Stecher

Werner Schustereder

Franz Josef Niedernostheide

Alexander Susiti

A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 &#x3bc;m along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1&#xd7;10cmto 5&#xd7;10cmover the section L.

Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex

A semiconductor device and manufacturing method is disclosed. One embodiment provides a common substrate of a first conductivity type and at least two wells of a second conductivity type. A buried high resistivity region and at least an insulating structure is provided insulating the first well from the second well. The insulating structure extends through the buried high resistivity region and includes a conductive plug in Ohmic contact with the first semiconductor region. A method for forming an integrated semiconductor device is also provided.

Semiconductor device and manufacturing method

Growing community of inventors

Klagenfurt, Germany

Thomas Neidhart