The Penn State Research Foundation

Other

Air Products and Chemicals, Inc.

Thomas N Jackson

Jianna Wang

Hagen Klauk

Douglas H Werner

Theresa S Mayer

Daniel B Thomasson

Diwakar Garg

Gareth J Knowles

Philip Bruce Henderson

Noel Christopher Giebink

Daniel Joseph Tempel

Susan Trolier-McKinstry

Kyusun Choi

Richard L Tutwiler

Mathias Bonse

Yuanyuan Li

Kaige Sun

Jie Sun

In Soo Kim

Keith Mickolajczyk

Hyun Soo Kim

Sung Kyu Park

Yixin Yan

Ioanna G Mina

Yiyang Gong

Craig S Deluccia

Haoyu Li

Christopher D Nordquist

William Hancock

David J Gundlach

Daniel Josef Tempel

Evanescently-coupled planar waveguides for enhancing total internal reflection fluorescence microscopy are disclosed. The waveguides include multiple thin layers of one or more materials on a cover slip arranged resonantly enhance the optical field at the surface of the layer stack by evanescently coupling to a leaky guided mode.

Waveguides for enhanced total internal reflection fluorescence microscopy

Disclosed herein is an aqueous alkaline etching solution comprising water and an alkaline material being selected from the group consisting of ammonium hydroxide, ammonium phosphate, ammonium carbonate, quaternary ammonium hydroxide, quaternary ammonium phosphate, quaternary ammonium carbonate, an alkali metal hydroxide, an alkaline earth metal hydroxide, or a combination comprising at least one of the foregoing alkaline materials; the aqueous alkaline solution being operative to etch aluminum oxide at a rate greater than or equal to about 2:1 over a rate at which it etches a metal oxide semiconductor to be protected; wherein the aqueous etching solution has a pH of 8 to 13.

Solution for etching a thin film transistor and method of manufacturing the same

The present invention discloses plasma enhanced chemical vapor deposition (PECVD) process for depositing n-type and p-type zinc oxide-based transparent conducting oxides (TCOs) at low temperatures with excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers. Specifically, it discloses PECVD process for depositing n-type ZnO by doping it with B or F and p-type ZnO by doping it with nitrogen excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers for TCO application. The process utilizes a mixture of volatile zinc compound, argon and/or helium as a diluent gas, carbon dioxide as an oxidant, and a dopant or reactant to deposit the desired ZnO-based TCOs.

Method for depositing zinc oxide at low temperatures and products formed thereby

An example ultrasound device, such as a transducer array, includes a plurality of ultrasound transducers, each ultrasound transducer having a first electrode, a second electrode, a thin piezoelectric film located between the electrodes, and a substrate supporting the plurality of ultrasound transducers. In some examples, the electrode separation is less than 10 microns, facilitating lower voltage operation than conventional ultrasound transducers.

High frequency ultrasound transducers

A reconfigurable frequency selective surface (FSS) includes a plurality of conducting patches supported on the surface of a dielectric layer, with selectable electrical interconnections between the conducting patches so as to provide a desired characteristic. The reconfigurable FSS can be used in a reconfigurable artificial magnetic conductor (AMC). A reconfigurable AMC includes a dielectric layer, a conducting back-plane on one surface of the dielectric layer, and a reconfigurable FSS on the other surface of the dielectric layer. A reconfigurable AMC can be used as a dynamically reconfigurable ground plane for a low-profile antenna system.

Pixelized frequency selective surfaces for reconfigurable artificial magnetically conducting ground planes

There are disclosed molecular scale devices for performing logic functions. Devices comprise at least one input molecular unit, at least one output molecular unit, at least one molecular unit for performing logic or memory functions, and a means for effecting charge transport. Devices of the invention are useful for a variety of electronic and optoelectronic applications.

Proton or ion movement assisted molecular devices

An antenna comprises an arrangement of electrically conducting segments, the arrangement including intersection points where two or more electrically conducting segments are in electrical communication. Example antennas include a plurality of capacitors located within some or all of the electrically conducting segments. Capacitance values can be determined using an optimization algorithm to obtain desired values of antenna resonance frequency (or frequencies), bandwidth, and/or radiation pattern, and may be adjusted in order to control an antenna parameter such as beam steering direction.

Frequency-agile beam scanning reconfigurable antenna

Passive or active pixelized antenna structures are described in which the radio-frequency (RF) tuning of individual antenna pixel elements, the connections of individual antenna pixel elements to other antenna elements, and optionally the local phase of individual elements or groups of elements, is varied and controlled using tunable elements. Efficient and low-cost control of a large number of tunable elements is provided by matrix addressing techniques.

Actively reconfigurable pixelized antenna systems

A light emitting device with improved carrier injection. The device has a layer of organic light emitting material and a layer of organic semiconductor material that are interposed between first and second contact layers. A carrier transport layer,may optionally be included between the semiconductor and light emitting layers. When used as a diode, the first and second contacts are functionally the anode and cathode. The device can also be a field effect transistor device by adding a gate contact and a gate dielectric. The first and second contacts then additionally have the function of source and drain, depending on whether the organic semiconductor material is a p-type or an n-type. Preferably, the organic semiconductor is formed with pentacene.

Organic light emitters with improved carrier injection

There is a method for forming a multilayer electronic device. The method has the following steps: a) depositing a thin molecular layer on an electrically conductive substrate and b) depositing metal atoms or ions on the thin molecular layer at an angle of about 60 degrees or less with respect to the plane of the exposed surface of the thin molecular layer.

Method for making multilayer electronic devices

The present invention provides a process for preparing a patterned organic layer from an unpatterned water-soluble organic layer. The process includes the steps of: imagewise exposing to radiation a photosensitive unpatterned water-soluble organic layer deposited on an organic semiconducting material, a metal or an insulator layer, to produce an imagewise exposed organic layer having exposed and unexposed regions; and contacting the imagewise exposed organic layer and an aqueous-based developer to selectively remove the unexposed regions thereby producing the patterned organic layer. The present invention also provides an improved for fabricating an electronic device having a patterned organic layer adjacent to an organic semiconducting material, metal or insulator layer.

Aqueous-based photolithography on organic materials

An electro-fluidic assembly process for integration of an electronic device or component onto a substrate which comprises: disposing components within a carrier fluid; attracting the components to an alignment sites on the substrate by means of electrophoresis or dielectrophoresis; and aligning the components within the alignment site by means of energy minimization. The substrate comprises: a biased backplane layer, a metal plane layer having one or more alignment sites, a first insulating layer disposed between the backplane layer and the metal plane layer, and a second insulating layer, e.g., benzocyclobute, having a recess disposed therein, wherein the second insulating layer is on the surface of the metal plane layer opposite from the first insulating layer and wherein the recess is in communication with the alignment site.

Electro-fluidic assembly process for integration of electronic devices onto a substrate

The present invention is drawn to a thin-film transistor having a layer of semiconducting organic material provided on an insulating substrate and integrated with at least two electrical contacts for applying an electric voltage to the semiconducting organic material, wherein the semiconducting organic material is a semiconducting organic random copolymer with a highly ordered chain structure, a large effective conjugation length and a high regioregularity, and wherein the copolymer is synthesized from different fractions of at least two organic monomer compounds, with the smallest of the at least two monomer compounds being present in the lowest fraction.

Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material

The method of the invention configures a tri-layer thin film transistor (TFT) on a substrate, the TFT including a stack including a gate electrode supported by the substrate, followed by a first layer of insulator, a layer of semiconductor and a second layer of insulator. The method employs a first step of illumination through the substrate, as shadowed by said gate electrode, to enable a patterning of the second layer of insulator into an insulator patch which is aligned with the gate electrode. A next step of illumination through the substrate, as shadowed by said gate electrode, enables a patterning of metallization contacts for the TFT in alignment with the insulator patch.

Method for manufacture of fully self-aligned tri-layer a-Si:H thin film transistors

This invention is directed toward a process of manufacturing, including a technique of assembling parts of an apparatus. The technique includes forming electrode structures on a substrate, suspending the apparatus part or parts in a dielectric medium between electrodes of the electrode structure, and using near-field (that is, short range) electric field forces to align the part or parts in pre-determined positions in accordance with the desired apparatus topography. The part or parts may include semiconductor die, nanometer wires for making connections to devices, or other components requiring precision alignment.

Growing community of inventors

State College, PA, United States of America

Thomas N Jackson