Qunano Ab

Thomas Mårtensson

Lars Samuelson

Jonas Ohlsson

Patrik Svensson

Werner Seifert

Anders Mikkelsen

Bernhard Mandl

The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.

Nanowire growth on dissimilar material

The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template.

Method for metal-free synthesis of epitaxial semiconductor nanowires on si

The present invention relates to growth of III-V semiconductor nanowires () on a Si substrate (). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires () grown on, and protruding from, a (111) surface of a Si substrate () in an ordered pattern in compliance with a predetermined device layout is also presented.

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Lund, Sweden

Thomas Mårtensson