Crystal Is, Inc.

Thomas Miebach

Robert T Bondokov

Jianfeng Chen

Leo J Schowalter

Toru Kimura

Keisuke Yamaoka

James R Grandusky

Shichao Wang

Sean P Branagan

Takashi Suzuki

Naoki Ishigami

In various embodiments, polycrystalline AlN ceramics, single-crystalline AlN boules, and/or single-crystalline AlN substrates are infused with tungsten present on the surface and/or within the bulk thereof. The tungsten-infused AlN materials may be utilized to fabricate electronic and/or optoelectronic (e.g., light-emitting) devices thereon.

Tungsten-infused aluminum nitride crystals and methods of forming them

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers. The single-crystal aluminum nitride boules may advantageously have diameters that increase along at least portions of their lengths.

Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths

In various embodiments, aluminum nitride single crystals have large crystal augmentation parameters and may therefore be suitable for the fabrication of numerous, large single-crystal aluminum nitride substrates having high crystalline quality. The aluminum nitride single crystals may have large boule masses and volumes.

Aluminum nitride single crystals having large crystal augmentation parameters

In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.

Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals

In various embodiments, single-crystal aluminum nitride boules and substrates are highly visibly transparent and have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

Aluminum nitride single crystals having controllable color and methods of forming them

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

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Malta, NY, United States of America

Thomas Miebach