Snaptrack Incorporated

Epcos Ag

Trumpf Scientific Lasers Gmbh & Co. Kg

Tdk Corporation

Max-planck-gesellschaft Zur F&#xf6;rderung Der Wissenschaften E. V.

Rf360 Singapore Pte. Ltd.

Ludwig-maximilians-universitaet Muenchen

Epcos Pte Ltd

Ludwig-Maximilians-Universitat München

Thomas Metzger

Edgar Schmidhammer

Werner Ruile

Pasi Tikka

Ferenc Krausz

Juha Ellä

Jürgen Portmann

Christoph Eggs

Andreas Link

Gudrun Henn

Habbo Heinze

Marcel Giesen

Gilles Moulard

Paul Muralt

Ansgar Schäufele

Ralph Stömmer

Thomas Bain Pollard

Matthias Haefner

Ramin Matloub

Phillip Ekkels

Moritz Ueffing

Christian Diekmann

Sebastian Stark

Akifumi Kamijima

Yoshikazu Kihara

Arto Holm

A laser system includes a laser radiation source for providing pulsed laser radiation, and an optical system that includes a first polarization setting optical unit configured to set a circular polarization state of the pulsed laser radiation and a multipass cell having at least two mirrors. The pulsed laser radiation passes through the multipass cell with formation of a plurality of intermediate focus zones. The multipass cell is filled with a filling gas that has an optical nonlinearity and causes a spectral broadening of the pulsed laser radiation in the intermediate focus zones. A pressure of the filling gas is set in a pressure range so that there is an ionization behavior of the filling gas in a form of multiphoton ionization. Focus diameters of the intermediate focus zones are set such that the pulsed laser radiation passes through the multipass cell without ionization of the filling gas.

Laser system and method for the spectral broadening of pulsed laser radiation

A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising MN, deposited onto the first surface, and having a second surface. As a first surface a crystallographic R-plane of sapphire is used enabling an orientation of c-axis of the piezoelectric layer parallel to the first and second surfaces.

Multiple layer system, method of manufacture and saw device formed on the multiple layer system

An optical arrangement spectrally broadens laser pulses for nonlinear pulse compression. The optical arrangement has: a broadening section that is configured to guide a laser pulse repeatedly through at least one nonlinear broadening element. The nonlinear broadening element has a dispersion property that is selected such that the dispersion property compensates any self-focusing of the laser pulse in the nonlinear broadening element.

Optical arrangement for spectrally broadening laser pulses

A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), a wiring level (M, M) is realized, which comprises structured conductor paths and which is connected via through-connections to the functional structure (FS).

Component with a thin-layer covering and method for its production

A phase control system for controlling the relative phase (&#x3c6;) of two laser beams of a laser system, which are to be coherently combined, is disclosed that enables providing a phase-controlled sum laser beam. An optical system of the phase control system includes a beam input for receiving a measuring portion of two collinear coherent laser beams, which are superimposed to form a sum laser beam, and provides measuring beams or measuring beam regions, which are used with associated photodetectors for outputting photodetector signals. For determining the relative phase from the photodetector signals, the phase control system has an evaluation device and a delay device for being inserted into the beam path of at least one of the two laser beams. The optical system is configured such that the measuring beams or measuring beam regions are related to different phase offsets.

Relative phase measurement for coherent combining of laser beams

A reconfigurable multiplexer including a plurality of filter and/or duplexers, each respectively associated with a frequency band and can be connected to an antenna connector via a band switch individually or several at the same time. One or more phase shifters capable of adjusting a phasing of a filter or duplexer during a multiplex mode so as to improve the interband insulation in a given multiplex mode. A variable notch can be connected to one of the filters or partial filters of a duplexer.

Multiplexer

A MEMS component having increased integration density and a method for manufacturing such a component are specified. The component comprises a base wafer and a cover wafer arranged over this. A first cavity is arranged between the base wafer and the cover wafer. A second cavity is arranged over the cover wafer, below a thin-layer covering. The cavities contain component structures.

MEMS component having a high integration density

A BAW component is provided. A method for manufacturing a BAW component is also provided. The component includes a bottom electrode, a top electrode and a first piezoelectric material. The first piezoelectric material is between the bottom electrode and the top electrode. The first piezoelectric material has a higher piezoelectric coefficient than AlN.

BAW component and method for manufacturing a BAW component

The invention relates to an HF module, the filter functionality of which can easily be expanded and which has good electrical properties. For this purpose, the module comprises two filter units with a respective HF filter and a switch having two possible switching states. The two filter units are connected in parallel.

HF filter module with improved expandability

A component suitable for miniaturization and comprising acoustically decoupled functional structures is specified. The component comprises a first functional structure, a first thin-film cover, which covers the first functional structure, and a second functional structure above the thin-film cover. The thin-film cover does not touch the first functional structure.

Component comprising stacked functional structures and method for producing same

A capacitor having improved linear properties is provided. The capacitor is compatible with manufacturing processes of components which function using BAW. The capacitor comprises a first and a second electrode (E, E) in a first electrically conductive layer and a third electrode (E) in a second electric layer. A dielectric layer (DL) is arranged between the electrically conductive layers. The first electrode (E) and the second electrode (E) are the terminal electrodes of the capacitor.

Capacitor having an improved linear behavior

A method can be used for producing a microelectromechanical transducer. A plurality of microelectromechanical transducers are produced on a single wafer. Each transducer includes a diaphragm. The wafer is divided into at least a first and a second region. The mechanical tensions of a random sample of diaphragms of the first region are established and the values are compared with a predetermined desired value. The mechanical tensions of a random sample of diaphragms of the second region are established and the values are compared with the predetermined desired value. The tensions of the diaphragms in the first region are adjusted to the predetermined desired value, and the tensions of the diaphragms in the second region are adjusted to the predetermined desired value.

Method for producing a microelectromechanical transducer

A laser pulse amplifier device () includes an amplifying cavity () comprising an amplifying laser gain medium () and multiple cavity mirrors (to) spanning a cavity light path (), wherein the amplifying cavity () is configured for an amplification of laser pulses () circulating along the cavity light path, and a multi-pass amplifier () being optically coupled with the amplifying cavity () and comprising multiple deflection mirrors () spanning a multipass light path (), wherein the multi-pass amplifier () is configured for a post-amplification of laser pulses () coupled out of the amplifying cavity (), wherein the amplifying cavity () and the multi-pass amplifier () are arranged such that the laser gain medium () of the amplifying cavity () is included as an active medium in the multi-pass light path () of the multi-pass amplifier (). Furthermore, a method of amplifying laser pulses is described.

Amplifier device and method for amplifying laser pulses

Guided bulk acoustic wave devices and method for manufacturing guided bulk acoustic wave devices are provided. A guided bulk acoustic wave device includes a resonator structure with a piezoelectric layer, an electrode layer for exciting guided bulk acoustic waves and a wave guide layer. The thickness of the piezoelectric layer is less than or equal to 50 &#x3bc;m.

Guided bulk acoustic wave device having reduced height and method for manufacturing

A modularly constructed electrical component having a module substrate, preferably, of Si, and having one or more preferably un-housed chips placed on the module substrate while being electrically connected thereto and each joined to the module substrate, e.g., by direct wafer bonding. A recess is provided in the module substrate so that a closed hollow space is formed when the chip is joined to the module substrate. The hollow space is not formed by a protective cap, which surrounds the chip and, with the module substrate, closes it on all sides. Rather it is formed by the joining of opposing contact areas of the chip underside and of the upper side of the module substrate. The component can be economically produced because it does not require a protective cap for creating the hollow space. The component has a higher yield than monolithic integration of the functional units.

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Munich, Germany

Thomas Metzger