Taiwan Semiconductor Manufacturing Comp. Ltd.

Nxp B.v.

Thomas Merelle

Gerben Doornbos

Franciscus Petrus Widdershoven

David Van Steenwinckel

Viet Nguyen

Robert James Pascoe Lander

Jan Leo Dominique Fransaer

Dimitri Soccol

Robert James Lander

Dimitri Soccoi

A device and method of fabricating the same are disclosed. In an example, a device includes a first fin Field Effect Transistors (finFET) formed on a substrate. The first finFET including a fin formed on the substrate. The device further includes a second finFET formed on the substrate. The first finFET and the second finFET share the fin and wherein the first finFET is without any low density doped (LDD) extension region in the substrate and wherein the second FinFET is associated with a first LDD extension region formed in the substrate such that a drive strength of the second finFET is greater relative to a drive strength of the first finFET.

FinFET drive strength modification

A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au&#x2014;Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au&#x2014;Cu alloy electrodes is also disclosed.

Semiconductor device having Au&#x2014;Cu electrodes, and method of manufacturing semiconductor device

A method and circuit in which the drive strength of a FinFET transistor can be selectively modified, and in particular can be selectively reduced, by omitting the LDD extension formation in the source and/or in the drain of the FinFET. One application of this approach is to enable differentiation of the drive strengths of transistors in an integrated circuit by applying the technique to some, but not all, of the transistors in the integrated circuit. In particular in a SRAM cell formed from FinFET transistors the application of the technique to the pass-gate transistors, which leads to a reduction of the drive strength of the pass-gate transistors relative to the drive strength of the pull-up and pull-down transistors, results in improved SRAM cell performance.

Semiconductor device having Au-Cu electrodes, and method of manufacturing semiconductor device

finFET drive strength modification

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Leuven, Belgium

Thomas Merelle