Plastic Logic Limited

Flexenable Limited

Thomas Meredith Brown

Paul A Cain

Henning Sirringhaus

Carl Martin Hayton

Anoop Menon

Nicholas Jim Stone

Tim Von Werne

James Watts

Michael Banach

John Devin Mackenzie

Di Ying

A method of fabricating an organic electronic device is provided. The organic electronic device has a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution process able semiconducting layer. The upper conducting layer preferably has a thickness of between 10 nm and 200 nm. The method includes patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.

Layer-selective laser ablation patterning

A method of producing a metal element of an electronic device on a substrate, including the steps of: forming a mixture of a material comprising metal atoms with a liquid, depositing the material from the liquid mixture onto a substrate, and then irradiating at least part of the deposited material with light to increase the electrical conductivity of the deposited material. A method of producing one or more elements of an electronic device, including the steps of: providing a substrate including one or more underlying elements of the electronic device and a thermally patternable layer overlying said one or more underlying elements; and using said one or more underlying elements to locally generate heat and thereby selectively induce a change in corresponding portions of said thermally patternable layer; and wherein either the change selectively induced in said corresponding portions directly results in the definition of one or more elements of the electronic device in a position determined by that of said one or more underlying elements, or alternatively including the additional step of using the change selectively induced in said one or more corresponding portions to facilitate the formation of one or more elements of the electronic device in a position determined by that of said one or more underlying elements. A method of producing an element of an electronic device, including the steps of: (a) providing a substrate; (b) depositing on said substrate a layer of a switchable material, which changes its physical or chemical properties upon irradiation with light or heating causing a change of its surface energy properties; (c) irradiatively inducing at selected regions of a layer of switchable material a change in physical or chemical properties that alters the surface energy of said selected regions and thereby forming a surface energy pattern on its surface; and (d) without removing said layer of switchable material in either irradiated selected regions or non-irradiated regions from the substrate depositing over the surface energy pattern produced in step (c) a material for forming an element of the electronic device such that the surface energy pattern controls the deposition of said material.

Production of electronic devices

An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor.

Organic electronic devices

A method is provided to isolated conductive pads on top of a multi-layer polymer device structure. The method utilizes laser radiation to ablate conductive material and create a non-conductive path, electrically isolating the conductive pads. The process is self-limiting and incorporates at least one layer within the stack that absorbs the radiation at the required wavelength. The prevention of radiation degradation of the underlying layers is achieved, as absorption of radiation occurs primarily on the surface of the structure, but not in any of the radiation sensitive underlying layers of the electronic device. The method preferably uses low energy infrared radiation which has been shown to produce little debris and no device degradation.

Electrode patterning

A method for generating via-hole interconnections by laser ablation, wherein the layers to be removed and ablated from the substrate are essentially transparent to the laser radiation, but the laser light is absorbed in an underlying absorbing layer with a sufficiently high optical density at the laser wavelength.

Forming holes using laser energy

A method of producing a plurality of transistors each including a source/drain electrode pair comprising a conductor material and a channel comprising semiconductor material between the source and drain electrodes of said source/drain electrode pair; the method comprising (i) forming over a substrate at least a first layer of said conductor material or a precursor thereto and a second layer of said semiconductor material or a precursor thereto; and (ii) thereafter removing selected portions of at least said first and second layers so as to define at least two adjacent source/drain electrode pairs that are unconnected to each other within said first and second layers.

Method of producing plurality of organic transistors using laser patterning

A method for forming an electronic device having a multilayer structure, comprising: embossing a surface of a substrate so as to depress first and second regions of the substrate relative to at least a third region of the substrate; depositing conductive or semiconductive material from solution onto the first and second regions of the substrate so as to form a first electrode on the first region and a second electrode on the second region, wherein the electrodes are electrically insulated from each other by the third region.

Electronic devices

A method for forming an electronic device in a multilayer structure comprising the steps of: defining a topographic profile in a laterally extending first layer; depositing at least one non-planarizing layer on top of the first layer such that the topographic profile of the surface of the or each non-planarizing layer conforms to that of the laterally extending first layer; and depositing a pattern of at least one additional layer onto the top-most non-planarizing layer, such that the lateral location of the additional layer is defined by the shape of the topographic profile of the non-planarizing layer, and whereby the additional layer is laterally aligned with the topographic profile in the first layer.

An electronic device including first, second and third conductor layers respectively arranged as the source, drain and gate electrodes of a field effect transistor, the third conductor layer being capacitively coupled with both the first and second conductor layers but with the second conductor layer to a greater degree than with the first conductor layer, wherein the electronic device is operable as a non-linear capacitor by applying an alternating voltage across the third conductor layer and the first conductor layer whilst leaving the second conductor layer at a floating potential. Also, an electronic device including a first pair of capacitively coupled first and second conductor layers and a second pair of capacitively coupled third and fourth conductor layers, wherein the first and third conductor layers and the second and fourth conductor layers are arranged as the drain and source electrodes of respective field effect transistors together with one or more gate electrodes conductively connected to either of the first and second conductor layers, wherein the electronic device is operable as a non-linear capacitor by applying an alternating voltage across the first and second conductor layers whilst leaving the third and fourth conductor layers at a floating potential.

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Rome, Italy

Thomas Meredith Brown