Applied Materials, Inc.

Thomas Mele

Sean M Seutter

Yuji Maeda

R Suryanarayanan Iyer

Sanjeev Tandon

Andrew C Lam

Yaxin Wang

Jacob W Smith

Sunderraj Thirupapuliyur

Randhir P Singh Thakur

An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

Silicon nitride film with stress control

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH)&#x2014;N.

Method for silicon based dielectric chemical vapor deposition

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Livermore, CA, United States of America

Thomas Mele