Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (crolles 2) Sas

Weebit Nano Ltd.

Thomas Magis

Jean-Marc Fedeli

Gabriel Molas

Christelle Charpin-Nicolle

Lea Di Cioccio

Jean-François Nodin

Amir Regev

Loic Sanchez

Yann Bogumilowicz

Guiseppe Piccolboni

Mathieu Bernard

Alessandro Bricalli

Serge Blonkowski

Pierre Brianceau

Rémy Gassilloud

Sebastien Mermoz

Ségolène Olivier

Alexis Abraham

Ségoléne Olivier

Yifat Cohen

An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode. The active layer includes a layer of a first electrically insulating oxide, wherein an electrically conductive filament can be formed, then subsequently broken and reformed several times successively. The upper electrode includes a reservoir layer, capable of receiving oxygen, which includes an upper part made of a metal and a lower part made of a second oxide, the second oxide being an oxide of the metal and including a proportion of oxygen such that the second oxide is electrically conductive.

Low forming voltage OxRAM memory cell, and associated method of manufacture

A method of manufacturing an optical waveguide with a vertical slot including the steps of a) providing a substrate successively including an electric insulator layer and a crystalline semiconductor layer, b) forming a trench on the semiconductor layer to expose the electric insulator layer and defining first and second semiconductor areas on either side, step b) being executed so that the first semiconductor area has a lateral edge extending across the entire thickness of the semiconductor layer, c) forming the dielectric layer having the predetermined width across the entire thickness of the lateral edge, the method being remarkable in that the trench formed at step b) is configured so that the second semiconductor area forms a seed layer.

Optical waveguide manufacturing method

A method for capillary self-assembly of a plate and a carrier, including: forming an etching mask on a region of a substrate; reactive-ion etching the substrate, the etching using a series of cycles each including isotropic etching followed by surface passivation, wherein a duration of the isotropic etching for each cycle increases from one cycle to another, a ratio between durations of the passivation and etching of each cycle is lower than a ratio for carrying out a vertical anisotropic etching to form a carrier having an upper surface defined by the region and side walls defining an acute angle with the upper surface; removing the etching mask; placing a droplet on the upper surface of the carrier; and placing the plate on the droplet.

Etching method for forming a carrier having inward side walls in particular for confining a droplet for capillary self-assembly

Growing community of inventors

Grenoble, France

Thomas Magis