Novellus Systems Incorporated

Thomas M Pratt

Edward J McInerney

Shawn D Hancock

William R Johanson

John Joseph Mazzocco

Gary B Lind

Craig Lyle Stevens

Colin F Smith

Scott McClelland

Kerry Hopkins

An apparatus and method for sealing and unsealing a chemical deposition apparatus in a chemical deposition process chamber includes a microvolume that has dual sealing elements at its periphery. One seal, the outer seal, is used to seal the inside of the microvolume from the main process chamber. The second (inner) seal is used to seal the inside of the microvolume from a vacuum source. The apparatus and process of the present invention has several advantages for enhanced chamber performance.

Dual seal deposition process chamber and process

The mechanism comprises a magnetically coupled drive mechanism for transporting semiconductor wafers in a semiconductor wafer processing system. The mechanism includes an actuator within a cylinder that contains a set of magnets that drive a complementary set of magnets inside a carriage along a linear path. The carriage is limited to linear motion via a linear ball slide. The magnets in the actuator and carriage are magnetically coupled in such a way as to prevent angular rotation of the magnets within the actuator. Accordingly, driving elements in the actuator can be moved via rotation of a ball screw shaft coupled to a ball nut affixed to the actuator magnets.

Magnetically coupled linear servo-drive mechanism

A multi-station processing chamber in which incompatible processes are performed includes multiple pedestals positioned in wells with annular gaps around the pedestals. Showerheads located above the pedestals flow reactive gases over substrates located on the pedestals. The reactive gases are drawn through the annular gaps by a pressure gradient. The reactive gases are then pumped out of the wells through an exhaust port. The narrow annular gap permits little recirculation of the reactive gases one they are drawn into the wells. Moreover, the showerheads are flush with ceiling of the chamber and the wells contain smooth contours to minimize dead space in the chamber thereby reducing residence time of the reactive gases. An indexing plate is used to lift the substrates off the pedestals and to accurately position the substrates at the next processing station. In one embodiment a purge plate located on the ceiling of the chamber between the showerheads flows an inert gas, such as argon, to further assist in maintaining a separation between the reactive gases. Thus, while one process, such as a silane initiation is performed at one station, other stations may contemporaneously perform an incompatible process, such as a tungsten hexafluoride-silane nucleation process and hydrogen reduction, thereby increasing throughput.

Isolation of incompatible processes in a multi-station processing chamber

A multi-station processing chamber in which incompatible processes are performed includes multiple pedestals positioned in wells with annular gaps around the pedestals. Showerheads located above the pedestals flow reactive gases over substrates located on the pedestals. The reactive gases are drawn through the annular gaps by a pressure gradient. The reactive gases are then pumped out of the wells through an exhaust port. The narrow annular gap permits little recirculation of the reactive gases once they are drawn into the wells. Moreover, the showerheads are flush with ceiling of the chamber and the wells contain smooth contours to minimize dead space in the chamber thereby reducing residence time of the reactive gases. An indexing plate is used to lift the substrates off the pedestals and to accurately position the substrates at the next processing station. In one embodiment a purge plate located on the ceiling of the chamber between the showerheads flows an inert gas, such as argon, to further assist in maintaining a separation between the reactive gases. Thus, while one process, such as a silane initiation is performed at one station, other stations may contemporaneously perform an incompatible process, such as a tungsten hexafluoride--silane nucleation process and hydrogen reduction, thereby increasing throughput.

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San Jose, CA, United States of America

Thomas M Pratt