Saint-gobain/norton Industrial Ceramics Corporation

Saint-gobain Industrial Ceramics, Inc.

Thomas M Holmes

John A Tomanovich

This invention relates to tape casting a silicon carbide slip to eventually produce a silicon carbide wafer having a thickness of between 0.5 and 1 mm and a diameter of at least 150 mm, the wafer preferably having a strength of at least 30 MPa, and a porosity wherein at least 85% of the pores are no larger than 12 microns.

Tape cast silicon carbide dummy wafer

This invention relates to hot pressed silicon carbide dummy wafers having low iron impurity levels, and a method of using hot pressed silicon carbide dummy wafers in silicon wafer processing applications.

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Grafton, MA, United States of America

Thomas M Holmes