Heraeus Sensor Technology Gmbh

Heraeus Nexensos Gmbh

Heracus Sensor Technology Gmbh

Thomas Loose

Karlheinz Wienand

Stefan Dietmann

Matthias Muziol

Margit Sander

Dieter Teusch

Karl-Heinz Wienand

Mario Bachmann

Alfred Fleckenstein

An AlOcarrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10/K to 16*10/K, in particular from 8.5*10/K to 14*10/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.

Ceramic carrier and sensor element, heating element and sensor module, each with a ceramic carrier and method for manufacturing a ceramic carrier

A temperature sensor, particularly a high-temperature sensor, is provided in which an MI line or a heat-decoupling wire is arranged between the measurement resistor (chip) and the supply-line cable. Springs are stuck on the strands of the MI line, whereby the contacting to the measurement resistor is realized, or the heat-decoupling wire is stretched on one side to the end facing the measurement resistor and is connected elastically on the other end to the supply-line cable.

Turbocharger protection device

For production of a high-temperature sensor, in which a platinum resistance film is applied on a metal-oxide substrate, in particular sapphire or a ceramic plate, and a ceramic intermediate layer is laid on the resistance film, a self-supporting cover, in particular a ceramic or glass-ceramic cover, is bonded on the ceramic intermediate layer or a glass ceramic is mounted on the intermediate layer over its entire surface. Advantageously, the glass ceramic is electrically conductive or an ion conductor above 750&#xb0; C. and is laid on up to the cathode of the resistance film up to beyond the intermediate layer. In particular, the cover is bonded with a metal-doped glass ceramic, which is laid on the cathode of the resistance film up to beyond the intermediate layer. Preferably, the electrically insulating intermediate layer is coated with a glass ceramic or a glass ceramic doped with metal, which coating has a resistance of at most one megaohm per square at 850&#xb0; C. or above.

1200&#xb0; C. film resistor

A temperature sensor is provided with a temperature-sensitive element on a surface of a monocrystalline substrate, wherein the temperature-sensitive element is made of a platinum thin-film resistor and is produced as an epitaxial layer. The monocrystalline substrate can be an electrically insulating material, preferably &agr;-Al O or MgO. Alternatively, the substrate may be an electrically conducting material, such as silicon, with an electrically insulating epitaxial layer arranged between the substrate and the platinum thin-film resistor. The platinum thin-film resistor epitaxial layer is preferably deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), or molecular beam epitaxy (MBE).

Temperature sensor

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Linsengericht, Germany

Thomas Loose