Infineon Technologies Ag

Siemens Aktiengesellschaft

Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg

Thomas Licht

Reinhold Bayerer

Alfred Kemper

Volker Gabler

Karl Weidner

Jörg Zapf

Karsten Guth

Roland Speckels

Norbert Seliger

Dirk Siepe

Franz Auerbach

Gerhard Mitic

Bernd Gutsmann

Siegfried Ramminger

Hans-Peter Degischer

A device and a method for making a semiconductor device including bonding a first bonding partner to a second bonding partner. The device comprises a lower tool and an upper tool, the upper tool including a plunger having a bottom side facing the lower tool at which bottom side a vacuum is creatable, so that the first bonding partner can be picked up by vacuum from the upper tool and positioned on the second bonding partner.

Device and method for making a semiconductor device including bonding two bonding partners

A semiconductor substrate and a method for producing it is disclosed. In one embodiment, a contact region and a corresponding contact material of the semiconductor substrate are formed, in regions or completely, with a protection against oxidation.

Semiconductor module

A method and a device is provided for levelling an area region on the surface of a metal or metallization layer of a carrier. The area region is made planar by the action of a stamp or of a roller.

Method and device for producing a bondable area region on a carrier

In an arrangement having at least one substrate, at least one electrical component is disposed on a surface section of the substrate and is provided with an electrical contact area, and at least one electrical contact lug has an electrical connecting area electrically contacting the contact area of the component. The connecting area of the contact lug and the contact area of the component are interconnected so that at least one zone of the contact lug protrudes beyond the area of the component. The contact lug is provided with at least one electrically conducting film while the electrically conducting film is provided with the electrical connecting area of the contact lug. The arrangement is particularly useful for large-area, low-inductive contacting of power semiconductor chips, as it allows for high current density.

Electrical component on a substrate and method for production thereof

An arrangement for cooling a power semiconductor module, the power semiconductor module having a substrate with a ceramic plate and may have a metallization thereon, the arrangement has a container for the intake of a coolant with a heat-conducting plate; the heat-conducting plate having two sides, one side joined to the metallization of the substrate and the other side being in contact with the coolant; wherein the heat-conducting plate is made of materials having a metal matrix composite (MMC) material with a filling content, which results in a thermal expansion of below that of copper.

Arrangement for cooling a power semiconductor module

A method for structured application of a laminatable intermediate layer () to a substrate () for a semiconductor module, wherein a separating layer is indirectly or directly applied to the substrate () over a large surface, the intermediate layer () is applied to the substrate (), including the separating layer(s), by lamination, over a large surface, the intermediate layer () is opened in places on the substrate (), where recesses are provided for the intermediate layer (), and the separating layer () is removed in these places.

Method for the structured application of a laminatable film to a substrate for a semiconductor module

A composite material and a base plate made of this composite material for mounting electrical components and for connecting these components to a cooling device is disclosed. In one embodiment, the composite material includes a matrix material and fibers embedded therein. The fibers have in this case an anisotropic, directionally optimized distribution in the matrix material, so that heat occurring in a locally confined area can be effectively distributed and dissipated. The material of the fibers includes SiC, highly graphitized carbon or diamond. The fibers are arranged in the matrix material in various fiber levels, the fibers in the upper fiber levels being oriented predominantly horizontally in relation to a reference area and the fibers in the lower fiber levels being oriented predominantly vertically in relation to the reference area.

Composite material and base plate

A power semiconductor arrangement has an electrically insulating and thermally conductive substrate, which is provided with structured metallization on at least one side, a cooling device which is in thermal contact with the other side of the substrate, at least one semiconductor component which is arranged on the substrate and is electrically connected to the structured metallization, an entirely or partially electrically insulating film which is arranged at least on that side of the substrate at which the at least one semiconductor component is placed, and which is laminated without any cavities onto the substrate including or excluding the at least one semiconductor component, and a contact-pressure device which exerts a force on the substrate locally and via the at least one semiconductor component such that the substrate is pressed against the cooling device.

Power semiconductor arrangement

The invention relates to a high-voltage module comprising a housing () which accommodates at least one structural component () that is fastened on a metal-ceramics substrate from a ceramic layer () comprising a first main face () and a second main face () opposite said first main face (), an upper metal layer () on the first main face () and a lower metal layer () on the second main face (). The high-voltage module is further characterized by comprising on the outer edges () of the substrate either a cast from weakly conductive particles () and a gel, or a cast from particles having a high dielectric constant as compared to the cast gel (), and a gel.

High-voltage module and method for producing same

A high-voltage module comprises a housing () which accommodates at least one structural component () that is fastened on a metal-ceramics substrate from a ceramic layer () comprising a first main face () and a second main face () opposite said first main face (), an upper metal layer () on the first main face () and a lower metal layer () on the second main face (). The high-voltage module is further comprising on the outer edges () of the substrate either a cast from weakly conductive particles () and a gel, or a cast from particles having a high dielectric constant as compared to the cast gel (), and a gel.

Growing community of inventors

Warstein, Germany

Thomas Licht