Telefonaktiebolaget Lm Ericsson (publ)

Thomas Lewin

Spartak Gevorgian

Harald Jacobsson

Dan Kuylenstierna

Per Ligander

Mingquan Bao

Anatoli Deleniv

Yinggang Li

Spartak Gevorgyan

Bertil Hansson

H&aring;kan Berg

Omid Aval

The present invention relates to a tunable microwave arrangement () comprising a waveguide arrangement and tuning elements comprising a number of varactors for tuning an electromagnetic signal input to the waveguide arrangement. It comprises a substrate (), a layered structure () comprising at least two conducting layers () and at least one dielectric layer () which are arranged in an alternating manner. The layered structure is arranged on the substrate () such that a first of said conducting layers () is closest to the substrate (). It also comprises at least one surface mounted waveguide (), a second of the conducting layers (), most distant from the substrate, being adapted to form a wall of the surface mounted waveguide (), which wall incorporates said tuning elements which are arranged to enable control of surface currents generated in said wall, hence loading the waveguide () with a tunable, controllable impedance.

Tunable microwave arrangements

Embodiments of the present invention relate to a self injection locked voltage controlled oscillator arrangement, a pair of coupled first and second voltage controlled oscillator devices are arranged on a chip, an amplifier device is arranged on the same of the refection type chip, and an off-chip delay line is arranged with one terminal connected to an output terminal of the coupled first and second voltage controlled oscillator devices, and on terminal adapted to reflect a signal from the output terminal, the amplifier device being arranged to amplify an injection signal from said output terminal and to supply the amplified injection signal to one of said first and second voltage controlled oscillation devices to provide a VCO arrangement that exhibits low phase noise and a small size.

Method and arrangement for voltage controlled oscillator device

A tunable electromagnetic delay line, comprising a first conductor with a first main direction of extension. The first conductor is arranged on top of a non-conducting substrate. The delay line additionally comprises a layer of a ferroelectric material with first and second main surfaces. The layer separates the first conductor and the substrate. The delay line also comprises a second conductor with a second main direction of extension, with the first and second main directions of extensions essentially coinciding with each other, and with the first and second conductors being each other's mirror image with respect to an imagined line in the center of the delay line along the first and second main directions of extension. The tuning is accomplished by applying a voltage between said first and second conductors.

Tuneable ferroelectric delay line having mirror image conductors

The present invention relates to a tunable microwave arrangement () comprising a microwave/integrated circuit device () and a substrate (). It comprises a layered structure disposed between said microwave/integrated circuit device and said substrate (), said layered structure acting as a ground plane and it comprises at least one regularly or irregularly patterned first metal layer (), at least one second metal layer (), at least one tunable ferroelectric film layer (), whereby said layers are so arranged that the ferroelectric film layers) () is/are provided between the/a first metal layer () and the/a second metal layer ().

The invention discloses a delay-locked loop circuit with input means for a signal that is to be delayed, the input means comprising means for splitting the input signal into a first and a second branch. The signal in the first branch is connected to a component for delaying the signal, and the signal in the second branch is used as a non-delayed reference for the delay caused by the delay component in the first branch. The delay component is a passive tunable delay line, and the circuit comprises tuning means for the tunable delay line, the tuning means being affected by said reference signal, and the first branch comprises output means for outputting a delayed signal with a chosen phase delay. Suitably, the delay component is continuously tunable, for example a tunable ferroelectric delay line.

Delay locked loop with precision controlled delay

A device is provided for multiplying the pulse frequency of a pulse train signal. The device includes input means for the signal and means for accessing the signal at points with a predetermined phase difference between them. The device additionally comprises means at a first level for combining accessed signal pairs, with one and the same phase distance within all the combined pairs, the output from each first level combining means being a pulse train. The device additionally comprises combining means at a second level for combining the pulse trains from the first level, and the combining means at the first level are such that the pulses in their output pulse trains have rise flanks which always coincide with the rise flank of the first signal in the combined accessed signal pairs, and fall flanks which always coincide with the fall flanks of the second signal in said pair.

Frequency multiplier

The invention discloses an oscillator circuit (), comprising an oscillating element () and output means () for outputting an oscillation frequency from the oscillating circuit. The circuit further comprises a signal delay means () which is arranged in series with the oscillating element and feeds the output signal back to the oscillating element. The delay means is () tuneable with respect to the delay it provides. The oscillating element can be an amplifier or a VCO, and the delay means can be a Delay Locked Loop or a tuneable delay line, depending on the embodiment of the invention.

Oscillator circuit with tuneable signal delay means

A printed circuit ( ) on a lossy substrate ( ) has been provided whereby intermediate structures ( ) under the top layer strips ( ) have been formed having a width being (d ) smaller than the width (w) of the strip. The intermediate structures ( ) are particular well suited for inductors ( ) on silicon substrates and result in a considerable increase in the Q-factor of the inductor at microwave frequencies.

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Onsala, Sweden

Thomas Lewin