Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Old Gmbh

Thomas Lehnhardt

Werner Bergbauer

Jürgen Off

Joachim Hertkorn

Philipp Drechsel

Juergen Off

Lise Lahourcade

Matthias Peter

Tobias Meyer

Alexander Frey

Peter Stauss

Alvaro Gomez-Iglesias

Martin Mandl

Asako Hirai

Bastian Galler

Tobias Gotschke

Jan-Philipp Ahl

Marcus Eichfelder

Xiaojun Chen

Heng Wang

Jong Ho Na

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 10cm.

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

Method for producing a nitride compound semiconductor component

In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body including a first region, an active region configured to generate electromagnetic radiation, a starting region, a plurality of funnel-shaped openings and a second region, wherein the starting region is arranged between the first region and the active region, wherein the active region is arranged between the starting region and the second region, wherein the funnel-shaped openings extend from the starting region through the active region as far as the second region, wherein the semiconductor body is based on a nitride compound semiconductor material, wherein the first region comprises n-doping, wherein the second region comprises p-doping, wherein the funnel-shaped openings are filled with a material of the second region, and wherein the funnel-shaped openings have a pre-determinable density, the density of the funnel-shaped openings being decoupled from a density of dislocations inside the first region.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.

Method of producing a radiation-emitting semiconductor chip and radiation-emitting semiconductor chip

A component having an enhanced efficiency and a method for producing a component are disclosed. In an embodiment, a component includes a semiconductor layer sequence comprising a p-conducting semiconductor layer, an n-conducting semiconductor layer and an active zone located therebetween, wherein the active zone comprises recesses on a side of the p-conducting semiconductor layer, each recess having facets extending obliquely to a main surface of the active zone, and wherein the p-conducting semiconductor layer extends into the recesses, and a barrier structure, wherein the active zone is arranged between the barrier structure and the n-conducting semiconductor layer so that an injection of positively charged charge carriers into the active zone via the main surface is hindered in a targeted manner so that an injection of positively charged charge carriers into the active zone via the facets is promoted.

Component having enhanced efficiency and method for production thereof

An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements () arranged at a distance from one another on a surface () of a carrier element (), wherein each of the radiation generating elements has a diameter of less than 10 &#x3bc;m in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (), and wherein the optoelectronic semiconductor component is free of a growth substrate ().

Optoelectronics semiconductor device and method for producing an optoelectronic semiconductor device

The invention relates to a method for producing a nitride semiconductor component (), comprising the steps of: &#x2014;providing a growth substrate () having a growth surface () formed from a planar area () with a plurality of three-dimensionally shaped surface structures () on said planar area (), &#x2014;growing a nitride-based semiconductor layer sequence () on the growth surface (), growth beginning selectively on a growth area () of said growth substrate, and the growth area () being less than 45% of the growth surface (). The invention also relates to a nitride semiconductor component () which can be produced according to said method.

Method for producing a nitride semiconductor component, and a nitride semiconductor component

A method for producing an electronic semiconductor chip and a semiconductor chip are disclosed. In embodiments, the method includes providing a growth substrate having a growth surface formed by a flat region having a plurality of three-dimensional surface structures on the flat region, directly applying a nucleation layer of oxygen-containing AlN over a large area to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the flat region.

The invention relates to a component () having a semiconductor layer sequence, which has a p-conducting semiconductor layer (), an n-conducting semiconductor layer (), and an active zone () arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers () having intermediate quantum well layers () and a plurality of n-side barrier layers () having intermediate quantum layers (). Recesses () having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Component having a multiple quantum well structure

Described is a method for producing a nitride compound semiconductor layer, involving the steps of:&#x2014;depositing a first seed layer () comprising a nitride compound semiconductor material on a substrate ();&#x2014;desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate ();&#x2014;depositing a second seed layer () comprising a nitride compound semiconductor material; and&#x2014;growing the nitride compound semiconductor layer () containing a nitride compound semiconductor material onto the second seed layer ().

Method for the production of a nitride compound semiconductor layer

In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer () based on AlInGaN where 0&#x2266;x4&#x2266;0.40 and on average 0&#x3c;y4&#x2266;0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer () on the fourth barrier layer (), wherein the quantum well layer () is based on InGaN where 0.08&#x2266;y&#x2266;0.35, growing a first barrier layer () based on AlInGaN where 0&#x2266;x1&#x2266;0.40 and on average 0&#x3c;y1&#x2266;0.4 onto the quantum well layer (), wherein the In content decreases along the growth direction (z), growing a second barrier layer () based on GaN onto the first barrier layer (), and growing a third barrier layer () based on GaN onto the second barrier layer (), wherein the third barrier layer () is grown with the addition of Hgas.

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Wuppertal, Germany

Thomas Lehnhardt