Semitool, Inc.

Other

Applied Materials, Inc.

Semitoof, Inc.

Thomas Lee Ritzdorf

Lyndon W Graham

Gregory J Wilson

Paul R McHugh

Robert Allen Weaver

Kyle Moran Hanson

Jeffrey I Turner

Robert W Batz, Jr

Linlin Chen

Curt T Dundas

Steve L Eudy

E Henry Stevens

LinLin Chen

Thomas C Taylor

Fredrick A Lindberg

Bradley C Carpenter

Dakin Fulton

Scot Conrady

Daniel J Woodruff

Randy Harris

John Lee Klocke

Robert W Berner

Steven L Peace

Brian Aegerter

Rajesh Baskaran

Daniel P Bexten

Bioh Kim

Zhongmin Hu

Curtis A Weber

Tim McGlenn

Timothy A Anderson

Curt Dundas

Training devices for domestic animals that do not operate by constricting around the animal's neck are disclosed. These devices have collars or harnesses that maintain their size, with a means for actuating a member or members that protrude inwardly toward the neck of the animal. Actuation of the device by tension from a leash attachment provides a pinching action between the protruding members such that the skin of the neck is pinched to provide a training cue to the animal without choking the animal.

Training devices for domestic animals

Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids.

Electrolytic copper process using anion permeable barrier

A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Method for low temperature annealing of metallization micro-structures in the production of a microelectronic device

An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.

Apparatus and methods for electrochemical processing of microelectronic workpieces

A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Apparatus and method for electrochemically depositing metal on a semiconductor workpiece

The present invention is directed to methods and compositions for depositing a noble metal alloy onto a microelectronic workpiece. In one particular aspect of the invention, a platinum metal alloy is electrochemically deposited on a surface of the workpiece from an acidic plating composition. The plated compositions when combined with high-k dielectric material are useful in capacitor structures.

Platinum alloy using electrochemical deposition

A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.

Method for filling recessed micro-structures with metallization in the production of a microelectronic device

A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close-loop system is also set forth.

Apparatus for controlling and/or measuring additive concentration in an electroplating bath

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters. In some embodiments, the facility analyzes a profile of the seed layer applied to a workpiece, and determines and communicates to a material deposition tool a set of control parameters designed to deposit material on the workpiece in a manner that compensates for deficiencies in the seed layer.

Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece

A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.

Apparatus and method for processing a microelectronic workpiece using metrology

A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece

Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.

Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density

A method and apparatus for processing a microelectronic workpiece using metrology. The apparatus can include one or more processing or transport units, a metrology unit, and a control unit coupled to the metrology unit and at least one of the processing or transport units. The control unit can modify a process recipe or a process sequence of the processing unit based on a feed forward or a feed back signal from the metrology unit. The control unit can also provide instructions to the transport unit to move the workpiece to a selected processing unit. The processing unit can include, inter alia, a seed layer deposition unit, a process layer electrochemical deposition unit, a seed layer enhancement unit, a chemical mechanical polishing unit, and/or an annealing chamber arranged for sequential processing of a workpiece. The processing units can be controlled as an integrated system using one or more metrology units, or a separate metrology unit can provide input to the processing units.

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Bigfork, MT, United States of America

Thomas Lee Ritzdorf