Facebook Technologies, LLC

Meta Platforms Technologies, LLC

Thomas Lauermann

Stephan Lutgen

David Hwang

Markus Broell

William Padraic Henry

David Massoubre

Daniel Bryce Thompson

Michael Grundmann

Berthold Hahn

Vasily Zabelin

François Gérard Franck Olivier

Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component is bonded to a second component using dielectric bonding and metal bonding. The first component includes an active light emitting layer between oppositely doped semiconductor layers. The second component includes a substrate having a different thermal expansion coefficient than the first component. First contacts of the first component are aligned to second contacts of the second component. A dielectric material of the first component is then bonded to a dielectric material of the second component. The metal bonding is performed between the first contacts and the second contacts, after the dielectric bonding, and using annealing. The bonded structure has a concave or convex shape before the metal bonding. Run-out between the first contacts and the second contacts is compensated through temperature-induced changes in a curvature of the bonded structure during the metal bonding.

Bonding methods for light emitting diodes

Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component including a semiconductor layer stack is hybrid bonded to a second component including a substrate that has a different thermal expansion coefficient than the semiconductor layer stack. The semiconductor layer stack includes an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The first component and the second component further include first contacts and second contacts, respectively. To hybrid bond the two components, the first contacts are aligned with the second contacts. Then dielectric bonding is performed to bond respective dielectric materials of both components. The dielectric bonding is followed by metal bonding of the contacts, using annealing. To compensate run-out between the first contacts and the second contacts, aspects of the present disclosure relate to changing a curvature of the first component and/or the second component during the annealing stage.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Reduction of surface recombination losses in micro-LEDs

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component and a second component. The first component includes a semiconductor layer stack having an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The second component includes a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component. First contacts of the first component are aligned with and bonded to second contacts of the second component. The first contacts of the first component form a first pattern within the first dielectric material of the first component, and the second contacts of the second component form a second pattern within the second dielectric material of the second component.

Hybrid-bonded and run-out compensated light emitting diodes

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a method includes performing p-side processing of a first component. The p-side processing is performed from a direction adjacent to a surface of a p-side semiconductor layer of the first component that is opposite to an active light emitting layer of the first component. The method also includes aligning first contacts of the first component with second contacts of the second component, and subsequently performing hybrid bonding of the first component to the second component by performing dielectric bonding of a first dielectric material of the first component with a second dielectric material of the second component at a first temperature, and subsequently performing metal bonding of the first contacts of the first component with the second contacts of the second component by annealing the first contacts and the second contacts at a second temperature.

A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof.

High-efficiency red micro-LED with localized current aperture

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. A plurality of mesa shapes are formed within the n-side semiconductor layer, the active light emitting layer, and the p-side semiconductor layer. The semiconductor layer stack comprises a III-V semiconductor material. The device also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, and a run-out between the first contacts and the second contacts is less than 200 nm.

Techniques disclosed herein relate to micro light emitting diodes (micro-LEDs) for a display system. A display system includes an array of micro light emitting diodes (micro-LEDs), an array of output couplers optically coupled to the array of micro-LEDs and configured to extract light emitted by respective micro-LEDs in the array of micro-LEDs, a waveguide display, and display optics configured to couple the light emitted by the array of micro-LEDs and extracted by the array of output couplers into the waveguide display. Each output coupler in the array of output couplers is configured to direct a chief ray of the light emitted by a respective micro-LED in the array of micro-LEDs to a different respective direction.

Micro-LED design for chief ray walk-off compensation

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm/s.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 &#x3bc;m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes reducing a lateral carrier diffusion in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. An outcoupling surface of the semiconductor layer has a diameter of less than 10 &#x3bc;m. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

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Cork, Ireland

Thomas Lauermann