Xerox Corporation

Thomas L Paoli

David P Bour

Robert L Thornton

James J Appel

Decai Sun

John E Epler

Robert D Burnham

Philip D Floyd

Michael A Kneissl

Ross D Bringans

Christopher L Chua

Linda T Romano

Patrick Yasuo Maeda

Gregory J Kovacs

John E Northrup

Tibor S Fisli

Jack A Walker

G A Connell

David W Treat

Kevin J Beernink

Eric Peeters

Donald R Scifres

David Kirtland Fork

Noble Marshall Johnson

Raj B Apte

Joel A Kubby

William Streifer

Harlan Forrest Chung

Robert Arthur Sprague

Christian G Van De Walle

Daniel Hofstetter

Rose M Donaldson

William J Mosby

Eva E Taggart

David Kalman Biegelsen

Werner K Goetz

Kenneth Russell Ossman

Henry W Sang, Jr

G A Neville Connell

Neville Connell

Rogelio F Nochebuena

Chris G Van De Walle

Doanld R Scifres

R Donald Yingling, Jr

R Donald Yinling, Deceased

Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Structure and method for electrical isolation of optoelectronic integrated circuits

A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.

Method and structure for nitride based laser diode arrays on an insulating substrate

An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.

Structure and method for planar lateral oxidation in active

A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.

Distributed feedback laser fabricated by lateral overgrowth of an active region

An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

Structure and method for index-guided buried heterostructure AlGalnN laser diodes

A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode.

Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes

A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.

Structure and method for planar lateral oxidation in passive devices

A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls the light output of the laser. This two section blue laser diode requires much lower power consumption than directly modulated lasers which reduces transient heating and &ldquo;drooping&rdquo; of the light output.

Two section blue laser diode with reduced output power droop

Group III-V nitride semiconductors are used as light emitters for optoelectronic devices. To provide the desired range of bandgaps and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because poor lattice mismatch between group III-V nitride alloys. Thus, a plurality of gratings or grooves are formed in the group III-V nitride layer in order to relieve strain between the group III-V nitride layer and the active region. The plurality of gratings allows segregation of In in a manner that optimizes the wavelength of light produced.

MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer

A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.

Monolithic scanning light emitting devices using micromachining

An electrostatographic development system includes a multicolor array; a photoreceptor having a plurality of layers, each layer being sensitive or accessible only to one of multiple wavelengths; and electrostatographic development apparatus for exposing areas of the photoreceptor to emitted light from the multicolor printbar, and, after exposure, depositing at least a plurality of toners on the photoreceptor in response to exposure of areas of layers of the photoreceptor to the emitted light. The multicolor array for such an electrostatographic development system includes a plurality of subarrays of light emitting areas arranged across a length of the array, wherein each of the plurality of subarrays includes a plurality of light emitting areas and each of the plurality of subarrays emit light of a different wavelength from the remaining subarrays.

Color Xerographic printing system with multicolor printbar

A solid state laser array is multiplexed using an array of micromirrors to permit high resolution printing in a wide format. Each laser in the laser array and each micromirror in the mirror array is individually controlled. The laser array may be an array of VCSELs produced on a GaAs substrate.

Method and apparatus for a solid state laser scanning architecture

Monolithic scanning light emitting devices

A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.

Ion-implantation assisted wet chemical etching of III-V nitrides and

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Thomas L Paoli