Infineon Technologies Ag

Thomas Kunstmann

Albert Birner

Uwe Seidel

Uwe Hoeckele

Manfred Frank

Eva-Maria Hess

Ivan Nikitin

Manfred Engelhardt

Guenther Ruhl

Hans-Joerg Timme

Irmgard Escher-Poeppel

Werner Robl

Peter Scherl

Raimund Foerg

Johann Strasser

Stefan Willkofer

Eduard Knauer

Matthias Mueller

Anja Gissibl

Michael Krenzer

Ivan Nikitn

A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.

Method for processing a workpiece by forming a pourous metal layer

An embodiment method for fabricating electronic devices having two components connected by a metal layer includes applying a metal layer to each component and connecting the metal layers such that a single metal layer is formed.

Electronic device and method for fabricating an electronic device

Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Porous metal etching

A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via by filling an opening with a first fill material and depositing a first insulating layer over the first fill material, the first insulating layer not being deposited on sidewalls of the fill material in the opening, wherein sidewalls of the first insulating layer form a gap over the opening. The method further includes forming a void by sealing the opening using a second insulating layer.

Through substrate via semiconductor components and methods of formation thereof

A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.

Through substrate via semiconductor components

According to various embodiments, a method for processing a semiconductor wafer or die is provided including supplying particles to a plasma such that the particles are activated by the plasma and spraying the activated particles on the semiconductor wafer or die to generate a particle layer on the semiconductor wafer or die.

Method for processing a semiconductor wafer or die, and particle deposition device

One or more embodiments may relate to a method for making a semiconductor structure, the method including: forming an opening at least partially through a workpiece; and forming an enclosed cavity within the opening, the forming the cavity comprising forming a paste within the opening.

Semiconductor device and method for making same

Growing community of inventors

Laaber, Germany

Thomas Kunstmann