Seiko Epson Corporation

Cambridge Display Technology Limited

Acreo Ab

Sumitomo Chemical Company, Limited

Seiko Epson Corporaition

Sumitmoor Chemical Company Limited

Thomas Kugler

Christopher Newsome

Shunpu Li

Tommi Remonen

David Russell

Rolf Magnus Berggren

David A Nilsson

Sheena Zuberi

Florence Bourcet

Magnus Berggren

Robert Forchheimer

Anna Malmström

Miaioxiang M Chen

M&aring;rten Armgarth

Jessica Häll

Marten Armgarth

Jeremy H Burroughes

Richard J Wilson

Tania Zuberi

David Russel

Luc H Leenders

Euan Christopher Smith

Julian Charles Carter

Johan J Lamotte

Martin Humphries

Jonathan Nigel Pillow

Kiran Timothy Kamtekar

Jonathan J Halls

Ruth Pegington

Petronella Norberg

Lars-Olov Bror Hennerdal

Jean-Benoit Giguere

Luisa Petti

Melanie O'Sullivan

Miaoxiang Chen

Karl P Andersson

Björn Knuthammar

Yonek Hleba

Mohd K Othman

Mårten Armgarth

Jessica Käll

A compound of formula (I): (Core)n-(X)m wherein Core is a core group; n is 0 and m is 1, or n is 1 and m is at least 1; and X is a group of formula (II): wherein: R, Rand Rare each independently H or a substituent; Rand Rare each a substituent; one of R-Ris a direct bond or divalent linking group linking the group of formula (II) to Core in the case where n is 1; x and y are 0, 1, 2, 3 or 4; and the compound of formula (I) is substituted with at least one ionic substituent. The compound may be used as an n-dopant to dope an organic semiconductor.

Dopant, charge transfer salt and organic electronic device

A separator for a battery formed from a polymer gel electrolyte that is disposed within the pores of a polymer mesh. The polymer gel electrolyte is formed from a crosslinked ion-conducting polymer and an ionic liquid. The separator is formed from a gel loaded with an electrolyte, which prevents issue with electrolyte leakage. The polymer mesh provides stability to the polymer gel electrolyte, allowing for use of thin films of the polymer gel electrolyte and use of soft polymer gel electrolytes.

Battery separator

A charge-transfer salt formed from a material comprising a repeat unit of formula (I) and an n-dopant: wherein BG is a backbone group of the repeat unit; Ris a ionic substituent comprising at least one cationic or anionic group; n is at least 1; Ris a non-ionic substituent; and m is 0 or a positive integer; the material further comprising a counterion balancing the charge of the cationic or anionic group. 

Charge transfer salts and uses thereof

A method of forming an n-doped organic semiconductor, the method comprising: formation of an n-dopant reagent by reaction of a composition comprising two or more precursor units for forming the n-dopant reagent and an organic semiconductor; and n-doping the organic semiconductor. One or more of the precursor units may be a substituent of a polymeric repeat unit. The n-doped organic semiconductor may be an electron-injection layer of an organic light-emitting device.

Method and composition

A composition comprising a first material substituted with at least one group of formula (I) and a second material substituted with at least one group selected from groups of formulae (IIa) and (IIb): wherein: Spand Spare spacer groups; NB independently in each occurrence is a norbornene group that may be unsubstituted or substituted with one or more substituents; n1 and n2 are 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; m2 is 1 if n2 is 0 and m2 is at least 1 if n2 is 1; Arrepresents an aryl or heteroaryl group; Rindependently in each occurrence is H or a substituent; and * represents a point of attachment to the first or second material. The composition may be used to form a layer of an organic electronic device, for example the hole-transporting layer of an organic light-emitting device.

Hole transporting compounds and compositions

A material substituted with a group of formula (I): wherein: Aris an aryl or heteroaryl group; Sprepresents a first spacer group; n1 is 0 or 1; m1 is 1 if n1 is 0 and m1 is at least 1 if n1 is 1; Rindependently in each occurrence is H or a substituent, with the proviso that at least one R1 is a group R11 selected from: alkyl comprising a tertiary carbon atom directly bound to a carbon atom of the cyclobutene ring of formula (I); branched alkyl wherein a secondary or tertiary carbon atom of the branched alkyl is spaced from a carbon atom of the cyclobutene ring of formula (I) by at least one &#x2014;CH&#x2014; group; and alkyl comprising a cyclic alkyl group; or with the proviso that at least two Rgroups are linked to form a ring.

Hole transporting cyclobutene compound

The present invention relates to a compound of general formula (I) which can transport holes in an organic optoelectronic device, and to blends and solutions comprising the compound of general formula (I):  

Compound

An organic light-emitting device comprising an anode (); a cathode (); a light-emitting layer () between the anode and the cathode; and an electron-transporting layer () comprising an electron-transporting material between the cathode and the light-emitting layer, wherein the cathode comprises a layer of a conducting material (B) and a layer of an alkali metal compound (A) between the electron-transporting layer and the layer of conducting material and wherein the electron-transporting material is a conjugated polymer comprising arylene repeat units.

Organic light-emitting device

A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.

Method of doping an organic semiconductor and doping composition

An ammonium thio-transition metal complex is used as an adhesion promoter for immobilizing temperature-stable transition metal oxide layers on an inert metal surface. The ammonium thio-transition metal complex comprises a transition metal selected from molybdenum, tungsten and vanadium, and is preferably ammonium tetrathiomolybdate. A precursor of the transition metal oxide is deposited on the inert metal surface by a solution-based process. The precursor is a dispersion or a dissolution of the transition metal oxide, a transition metal oxide hydrate, an ammonium salt of an acidic transition metal oxide hydrate or phosphoric acid-transition metal oxide complex in water or a phosphoric acid-transition metal oxide complex dissolved in a polar organic solvent.

Adhesion layer for solution-processed transition metal oxides on inert metal contacts

A method of modifying a fluorinated polymer surface comprising the steps of depositing a first layer on at least a portion of the fluorinated polymer surface, the first layer comprising a first polymer, the first polymer being a substantially perfluorinated aromatic polymer; and depositing a second layer on at least a portion of the first layer, the second layer comprising a second polymer, the second polymer being an aromatic polymer having a lower degree of fluorination than said first polymer, whereby the second layer provides a surface on to which a substance having a lower degree of fluorination than the first polymer, e.g. a non-fluorinated substance is depositable.

Surface modification

The present invention provides a process for the adjustment of the electron acceptor strength of a transition metal oxide (TMO) to the HOMO of a semiconducting hole transport layer material (HTL material) in a device comprising an anode, a layer of said TMO deposited on said anode and a layer of said HTL material deposited on said TMO layer, comprising: depositing a solution comprising a precursor for said TMO on said anode, wherein the precursor solution has a pH selected so that the acceptor strength of the TMO for which the solution is a precursor is adjusted to the HOMO of said HTL material; drying the deposited solution to form a solid layer precursor layer; depositing a solution of said HTL material onto said solid layer precursor layer; and annealing thermally the resulting product to give the desired device having TMO at the interface between said anode and said HTL.

Process for controlling the acceptor strength of solution-processed transition metal oxides for OLED applications

A method of forming an organic thin film transistor the method comprising:

Method of making an organic thin film transistor

Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode.

Method of forming organic semiconductor device that includes forming electrode contact layer by treating electrode surfaces with substance containing substituted arene

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Cambridge, United Kingdom

Thomas Kugler