Infineon Technologies Ag

Other

Siemens Aktiengesellschaft

Thomas Kuenemund

Berndt Gammel

Artur Wroblewski

Rainer Goettfert

Uwe Weder

Franz Klug

Jan Otterstedt

Gerd Dirscherl

Joel Hatsch

Dennis Tischendorf

Anton Huber

Hans Friedinger

Bernd Meyer

Wieland Fischer

Thomas Leutgeb

Winfried Kamp

Gunther Fenzl

Josef Haid

Thomas Poeppelmann

Mayk Roehrich

Andreas Wenzel

Siegmar Koeppe

Herbert Eichfeld

Peter Huber

Bernd Zimek

Christoph Saas

Bernhard Lippmann

Karl J Zapf

Roswitha Deppe

Nikolai Sefzik

Markus Gruetzner

Peter Egger

Michel d'Argouges

Molka Ben Romdhane

Various embodiments describe an integrated circuit. The integrated circuit includes at least seven planar field effect transistors provided in a common substrate next to one another with a maximum feature size in accordance with a technology node of a maximum of 65 nm. Each field effect transistor of the at least seven planar field effect transistors includes a first source/drain diffusion region, a second source/drain diffusion region, a channel region between the drain diffusion region and the source diffusion region, and a gate terminal. Each field effect transistor of the at least seven planar field effect transistors includes at least one common source/drain diffusion region with another field effect transistor of the at least seven planar field effect transistors. The common source/drain diffusion regions are free of vertical terminal contact material.

Integrated circuit for prevention of circuit design theft

According to various embodiments, an integrated circuit is described comprising a plurality of subcircuits having different signal transfer reaction times, a control circuit configured to form two competing paths from the plurality of subcircuits in response to a control signal, an input circuit configured to supply an input signal to the two competing paths and an output circuit configured to generate an output value depending on which of the competing paths has transferred the input signal with shorter reaction time.

Integrated circuit

A storage element that is operable based on a system clock signal, the storage element including a clock gating circuitry configured to generate a gated clock signal based on at least one Boolean signal and the system clock signal or a preprocessed system clock signal, wherein the clock gating circuitry comprises physical connections of small capacitance such that tapping of at least one of the physical connections results in a hold-time violation. Also, a hardware-based cryptography accelerator or a secured processing system including at least one such storage element, and a method for operating at least one storage element.

Storage element with clock gating

A physically obfuscated circuit (POC) circuit including a plurality of subcircuits, each comprising at least one p-channel field effect transistor (FET) and at least one n-channel FET, connected such that the at least one n-channel FET, if supplied with an upper supply potential at its gate, supplies a lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET.

Physically obfuscated circuit

A chip is described including a semiconductor layer including doped regions; a metallization layer on the semiconductor layer and at least one cell row including p-channel field effect transistors and n-channel field effect transistors, wherein the doped regions form source regions and drain regions of the p-channel field effect transistors and the n-channel field effect transistors; contacts extending from the source regions, the drain regions and gate regions of the p-channel field effect transistors and the n-channel field effect transistors to the metallization layer, wherein the metallization layer is structured in accordance with a metallization grid such that the p-channel field effect transistors and the n-channel field effect transistors are connected to form one or more logic gates.

Chip and method for manufacturing a chip

A semiconductor chip may have at least one p-channel field effect transistor (FET), at least one n-channel FET, a first and a second power supply terminal, wherein the at least one n-channel FET, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the at least one p-channel FET and the at least one p-channel FET, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the at least one n-channel FET, a precharge circuit to precharge the circuit to a first state, and a detection circuit configured to output an alarm signal if the circuit enters a second state.

Semiconductor chip state detector

A master-slave D flip-flop is disclosed having gates configured to supply two second intermediate signals as a function of first intermediate signals and a clock signal, and a slave circuit connected to a transfer circuit to form at least one output signal of the flip-flop from the second intermediate signals. The slave circuit is configured, when the second intermediate signals have, after a preceding pair of states, a predetermined pair of states, to maintain the at least one output signal as given by the preceding pair of states. The transfer circuit has a control input and is configured to generate the second intermediate signals to have the predetermined pair of states in response to a predetermined control signal state at the control input.

Master-slave D flip-flop

According to one embodiment, an integrated electronic circuit has a switching network configured to receive binary control states, one or more secret-carrying gates, wherein each secret-carrying gate represents Boolean secrets and is configured to receive binary input states and to output one or more Boolean secrets according to a state sequence of the binary input states, and one or more flip-flops configured to store binary output states output by the switching network and to supply binary input states to the one or more secret-carrying gates based on the stored binary output states. The switching network generates the binary output states by combining the binary control states and Boolean secrets output by the one or more secret-carrying gates. The integrated electronic circuit outputs Boolean secrets from the one or more secret-carrying gates and/or the binary output states from the switching network to another integrated electronic circuit.

Integrated electronic circuit

A chip having a substrate region having a substrate contact, an RS latch having two complementary nodes representing a storage state of the RS latch, a control circuit having a control input and configured to connect one of the complementary nodes to a supply potential depending on a potential at the control input, wherein the control input is connected to the substrate contact, and an output circuit connected to an output of the RS latch and configured to trigger an alarm depending on the storage state of the RS latch.

Chip with circuit for detecting an attack on the chip

According to one embodiment, a physical uncloneable function circuit for providing a protected output bit is described including at least one physical uncloneable function circuit element configured to output a bit of a physical uncloneable function value, a physical uncloneable function bit output terminal and a coupling circuit connected between the physical uncloneable function circuit element and the physical uncloneable function bit output terminal configured to receive a control signal, supply the bit to the physical uncloneable function bit output terminal for a first state of the control signal and supply the complement of the bit to the physical uncloneable function bit output terminal for a second state of the control signal.

Physical uncloneable function circuit

A delay circuit includes an electronic transmission element with a first input and a first output. The first input is coupled to the first output by two first switches wired in parallel. The first switches each have a control input, a second input and a second output. The second input is coupled to the second output by two second switches wired in parallel. The circuit further includes an input circuit to receive an input signal and feed the input signal to one of the transmission element inputs and feed the inverted input signal to the other of the transmission element inputs, and an output circuit. The output circuit is configured such that the output signal only changes in the case of a change in the input signal if the change in the input signal has brought about a change both at the first output and at the second output.

Delay circuit

According to an embodiment, a circuit is described comprising a plurality of flip-flops, a control circuit configured to provide a control signal to each flip-flop of the plurality of flip-flops and an integrity checking circuit connected to the control circuit and to the plurality of flip-flops configured to check whether the flip-flops receive the control signal as provided by the control circuit.

Circuit and method for checking the integrity of a control signal

According to an embodiment, a programmable logic circuit is described comprising a first data bit input to receive a first data bit a and a second data bit input to receive a second data bit b, a first program bit input to receive a first program bit p, a second program bit input to receive a second program bit p, a third program bit input to receive a third program bit pand a fourth program bit to receive a fourth program bit pand an output configured to output 

Programmable logic circuit and method for implementing a boolean function

According to one embodiment, a semiconductor chip is described including a semiconductor chip body and a semiconductor chip circuit on the body and including a first circuit path coupled to a first and a second node and including at least two gate-insulator-semiconductor structures and a second circuit path coupled to the first and the second node and including at least two gate-insulator-semiconductor structures. The first and the second circuit path are connected to set the first and the second node to complementary logic states. In each of the first and the second circuit path, at least one of the gate-insulator-semiconductor structures is configured as field effect transistor. In at least one of the first and the second circuit path, at least one of the gate-insulator-semiconductor structures is configured to connect the circuit path to the semiconductor body.

Growing community of inventors

Munich, Germany

Thomas Kuenemund