Applied Materials, Inc.

Thomas Kring

Tetsuya Ishikawa

Tom K Cho

Sudhir R Gondhalekar

Rolf A Guenther

Michael P Karazim

Rudolf Gujer

Abhi Desai

Steve H Kim

Shigeru Takehiro

Michael Douglas

Pavel Staryuk

Mehrdad Moshfegh

The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

Upper chamber for high density plasma CVD

The present invention provides exemplary antenna coil assemblies and substrate processing chambers using such assemblies. In one embodiment, an antenna coil assembly (,) for a substrate processing chamber includes an antenna coil (,) disposed in a frame (,). The frame includes a plurality of spaced apart tabs (,) around a periphery of the frame, with the coil coupled to the frame at the tabbed locations. At least one notch (,) is provided between each pair of adjacent tabs. The notches are adapted to facilitate thermal expansion and contraction of the frame at the notched locations to reduce stresses on the frame and coil connections.

Antenna coil assemblies for substrate processing chambers

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Sunnyvale, CA, United States of America

Thomas Kring