Applied Materials, Inc.

Wayne State University

Other

Thomas Knisley

Mark Joseph Saly

Bhaskar Jyoti Bhuyan

David P Thompson

Charles H Winter

Lakmal Charidu Kalutarage

David Alexander Britz

Pravin K Narwankar

Lance A Scudder

Yuriy Melnik

Sukti Chatterjee

Susmit Singha Roy

David Michael Thompson

Kelvin Chan

Regina Germanie Freed

Jonathan Stuart Frankel

Kaushal Gangakhedkar

Kenichi Ohno

Madhur Sachan

Keenan Navarre Woods

Ning Li

Mihaela A Balseanu

Mingwei Zhu

Tobin Kaufman-Osborn

Liqi Wu

Shuaidi Zhang

Kurt Fredrickson

Zachary J Devereaux

Stefan Cwik

Abhijit Basu Mallick

Jeffrey W Anthis

Benjamin Schmiege

Zeqing Shen

Eric H Liu

Shalini Tripathi

Apoorva Upadhyay

Panditha Koralalage Don Mahesh Chinthaka Karunarathne

A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

Electronic device fabrication using area-selective deposition

Metal complexes with nitrile ligands of the type MOXL, where M is molybdenum or tungsten, X is a halogen, each L is independently an organonitrile ligand with the general formula NCR, where each R is independently a C2-C18 group. Metal complexes with dinitrile bidentate ligands of the type MOXL', where L′ is a dintrile ligand, and dinitrile bridging ligands of the type (MOX)L′, where L′ is a dinitrile bridging ligand connecting the two metal atoms. Methods of making and using the metal complexes are described.

Metal organonitrile precursors for thin film deposition

Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

Deposition of semiconductor integration films

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

Methods of selective atomic layer deposition

Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

Methods for depositing blocking layers on metal surfaces

Halide ligand free rhenium complexes are described as well as methods for depositing rhenium-containing films. Some embodiments provide a rhenium complex with a general formula of OReO-M-R1R2R3, where M is a group IV element, R1 is selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, and R2 and R3 are each independently selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, or R2 and R3 join together to form a ring structure or an oxo group. Some embodiments provide a rhenium complex with a general formula of Re(NR')(NHR″), where R′ and R″ are independently selected from H, alkyl, alkenyl, alkynyl, or an aromatic ring.

Rhenium complexes and methods of use

Method for cleaning and encapsulating microLED features are disclosed. Some embodiments provide for a wet clean process and a dry clean process to remove contaminants from the microLED feature. Some embodiments provide for the encapsulation of a clean microLED feature. Some embodiments provide improved crystallinity of the microLED feature and the capping layer. Some embodiments provide improved EQE of microLED devices formed from the disclosed microLED features.

Preclean and encapsulation of microLED features

Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

Reducing agents for atomic layer deposition

Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Deposition of low-k films

Described are lanthanide-containing metal coordination complexes which may be used as precursors in thin film depositions, e.g., atomic layer deposition processes. More specifically, described are homoleptic lanthanide-aminoalkoxide metal coordination complexes, lanthanide-carbohydrazide metal coordination complexes, and lanthanide-diazadiene metal coordination complexes. Additionally, methods for depositing lanthanide-containing films through an atomic layer deposition process are described.

Homoleptic lanthanide deposition precursors

Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.

Methods of depositing SiCON with C, O, and N compositional control

Embodiments of the present disclosure generally relate to protective coatings on an aerospace component and methods for depositing the protective coatings. In one or more embodiments, a method for depositing a coating on an aerospace component includes depositing one or more layers on a surface of the aerospace component using an atomic layer deposition or chemical vapor deposition process, and performing a partial oxidation and annealing process to convert the one or more layers to a coalesced layer having a preferred phase crystalline assembly. During oxidation cycles, an aluminum depleted region is formed at the surface of the aerospace component, and an aluminum oxide region is formed between the aluminum depleted region and the coalesced layer. The coalesced layer forms a protective coating, which decreases the rate of aluminum depletion from the aerospace component and the rate of new aluminum oxide scale formation.

Methods of protecting aerospace components against corrosion and oxidation

Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, a method for producing a protective coating on an aerospace component includes depositing a metal oxide template layer on the aerospace component containing nickel and aluminum (e.g., nickel-aluminum superalloy) and heating the aerospace component containing the metal oxide template layer during a thermal process and/or an oxidation process. The thermal process and/or oxidation process includes diffusing aluminum contained within the aerospace component towards a surface of the aerospace component containing the metal oxide template layer, oxidizing the diffused aluminum to produce an aluminum oxide layer disposed between the aerospace component and the metal oxide template layer, and removing at least a portion of the metal oxide template layer while leaving the aluminum oxide layer.

Methods for depositing sacrificial coatings on aerospace components

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Livonia, MI, United States of America

Thomas Knisley