Huettinger Elektronik Gmbh & Co. Kg

Trumpf Huettinger Gmbh + Co. Kg

Hüttinger Elektronik Gmbh & Co. Kg

Trumpf Huttinger Gmbh + Co. Kg

Thomas Kirchmeier

Michael Glueck

Gerd Hintz

Hans-Juergen Windisch

Hanns-Joachim Knaus

Erich Pivit

Ekkehard Mann

Daniel Krausse

Wolfgang Oestreicher

Michael Glück

Christoph Hofstetter

Christoph Gerhardt

Christian Bock

Peter Wiedemuth

Markus Winterhalter

Moritz Nitschke

Markus Bannwarth

Christian Fritsch

Martin Steuber

Rolf Merte

Ulrich Heller

Peter Riessle

Wolfgang R H Oestreicher

Krishna Kishore Nedunuri

Hans-Jürgen Windisch

A method for producing an arc detection signal on the basis of a plurality of observation signals comprises producing an arc detection part-signal for each of at least two observation signals. Producing each of the part-signals includes correlating the respective observation signal with a correlation signal by influencing the correlation signal with the respective observation, thereby producing a correlation result; producing or modifying a coefficient on the basis of the correlation result; and weighting the respective observation signal with the coefficient. The arc detection part-signals are added to form the arc detection signal.

Method for producing an arc detection signal and arc detection arrangement

A plasma supply device generates an output power greater than 500 W at an essentially constant basic frequency greater than 3 MHz and powers a plasma process to which is supplied the generated output power, and from which reflected power is returned to the plasma supply device. The plasma supply device includes at least one inverter connected to a DC power supply, which inverter has at least one switching element, and an output network, wherein the at least one output network includes at least one inductance that has at least one magnetic field strengthening element that is a Perminvar ferrite.

Plasma supply device

In one aspect, operating a vacuum plasma process system including a plasma discharge chamber is accomplished by generating a main plasma in the discharge chamber in a first operating state, and generating an auxiliary plasma in the discharge chamber in a second operating state. Generating the main plasma includes generating a main plasma power with a first number of RF power generators, and generating an auxiliary plasma power with a second number of RF power generators, such that the second number is smaller than the first number.

Method for operating a vacuum plasma process system

Determining a high frequency operating parameter in a plasma system including a plasma power supply device coupled to a plasma load using a hybrid coupler having four ports is accomplished by: generating two high frequency source signals of identical frequency, the signals phase shifted by 90&#xb0; with respect to one another; generating a high frequency output signal by combining the high frequency source signals in the hybrid coupler; transmitting the high frequency output signal to the plasma load; detecting two or more signals, each signal corresponding to a respective port of the hybrid coupler and related to an amplitude of a high frequency signal present at the respective port; and based on an evaluation of the two or more signals, determining the high frequency operating parameter.

Determining high frequency operating parameters in a plasma system

Operation of a plasma supply device having at least one switching bridge with at least two switching elements, and configured to deliver a high frequency output signal having a power of &#x3e;500 W and a substantially constant fundamental frequency &#x3e;3 MHz to a plasma load is accomplished by determining at least one operating parameter, at least one environmental parameter of at least one switching element and/or a switching bridge parameter, determining individual drive signals for the switching elements taking into account the at least one operating parameter, the at least one environmental parameter and/or the switching bridge parameter, and individually driving the switching elements with a respective drive signal.

Driving switches of a plasma load power supply

In one aspect, protecting high frequency (HF) amplifiers of a plasma supply device configured to deliver &#x3e;500 W at a substantially constant fundamental frequency &#x3e;3 MHz is accomplished by: driving two HF amplifiers with two drive signals having a common frequency and a predetermined phase shift with respect to one another; generating two HF source signals using the HF amplifiers, the HF source signals coupled in a coupler to form a HF output signal; transmitting the HF output signal to the plasma load; measuring electrical variables related to the load impedances seen by the two HF amplifiers; determining whether the load impedance seen by one of the HF amplifiers lies outside a predetermined range; and adjusting the phase shift of the two drive signals, wherein neither of the load impedances seen by the HF amplifiers lies outside the predetermined range.

Protecting high-frequency amplifers

A plasma supply device includes a full bridge circuit that is connected to a DC power supply and that has two half bridges each with two series connected switching elements. The plasma supply device further includes a primary winding of a power transformer connected to centers of the half bridges between the switching elements. The primary winding includes a tapping connectable to an alternating current center between the potentials of the DC power supply.

Radio frequency power supply

A high frequency power supply, in particular a plasma supply device, for generating an output power greater than 1 kW at a basic frequency of at least 3 MHz with at least one switch bridge, which has two series connected switching elements, wherein one of the switching elements is connected to a reference potential varying in operation, and is activated by a driver, and wherein the driver has a differential input with two signal inputs and is connected to the reference potential varying in operation.

Isolating a control signal source in a high frequency power supply

A plasma supply device generates an output power greater than 500 W at an essentially constant basic frequency greater than 3 MHz and powers a plasma process to which is supplied the generated output power, and from which reflected power is returned to the plasma supply device. The plasma supply device includes at least one inverter connected to a DC power supply, which inverter has at least one switching element, and an output network. The output network is arranged on a printed circuit board. The output network can therefore be designed low priced and accurately.

An HF plasma process excitation configuration includes an HF generator that is connected to a plasma load through a directional coupler. The directional coupler includes a transmission line, a first coupling line for detecting reflected power from the plasma load, and a second coupling line for detecting forward power from the HF generator, is the first coupling line is spaced apart from the transmission line and is terminated at least at one end with a termination resistance. The second coupling line is spaced apart from the transmission line and is terminated at least at one end with a termination resistance. Each coupling line has a predetermined and adjusted characteristic impedance, and the termination resistances each have a resistance value that corresponds within a tolerance to the characteristic impedance of the associated coupling line with a tolerance.

Directional coupler

The power output of an RF plasma supply device is controlled by producing at least a first and second RF power signal by means of a respective RF generator, coupling at least two RF power signals into a coupled RF power, and distributing the coupled RF power between a plasma power that is to be supplied to a plasma load and an equalizing power that is to be supplied to an equalizing load. The power output is controlled by adjusting the levels and/or the phase position of the RF power signals in such a manner that, for plasma power in the range between a predefined lower power limit and a predefined nominal power, an insignificant portion of the coupled RF power constitutes the equalizing power and, for plasma power below the predefined lower power limit, a significant portion of the coupled RF power constitutes the equalizing power.

RF plasma supply device

An amplifier arrangement for operation at supply voltages of at least 100V and at output powers of at least 1 kW includes a half-bridge formed from two switching elements connected in series, two supply voltage terminals, and an output connection between the switching elements. A bypass capacitor is in parallel with the switching elements, and a current path is through the switching elements and the bypass capacitor, where the current path has a length of 10 cm or less, the half-bridge and the bypass capacitor are arranged on an area of 30 cm2, and a resonant circuit formed by capacitances and inductances in the current path has a resonance frequency of 100 MHz or greater.

Class D amplifier arrangement

The impedance of a variable load is matched to the output resistance of an HF generator by performing a first impedance matching for a first load impedance and by performing a second impedance matching for a second load impedance. The first impedance matching is carried out at a first frequency and the second impedance matching is carried out at a second frequency.

Method and device for load matching

A power module is adapted to be connected to a voltage source and to supply power to a load. The power module includes a power transistor; and a gate controller for driving the power transistor. The gate controller includes a gate transformer, and an impulse generator that extends a negative drive phase of a gate voltage to the power transistor relative to a positive drive phase of the gate voltage to the power transistor.

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Teningen, Germany

Thomas Kirchmeier