Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Osram Oledgmbh

Ams-osram International Gmbh

Thomas Kippes

Frank Singer

Norwin Von Malm

Tilman Ruegheimer

Zeljko Pajkic

Claus Jäger

Jason Rajakumaran

Carola Diez

Markus Boss

Dirk Becker

Tim Boescke

Claus Jaeger

Ulrich Frei

Stephan Haslbeck

Christopher Koelper

Daniel Dietze

Ee Lian Lee

Fabian Knorr

Michael Mueller

Annaniah Luruthudass

Melanie Sternecker

Florian Lex

In an embodiment a method includes providing a substrate having at least one conductor track situated thereon, applying at least one accumulation of an electrically conductive material to a surface of the conductor track, providing a carrier having at least one electrical contact, applying an electrically conductive adhesive to the at least one accumulation of the electrically conductive material and/or the at least one electrical contact and arranging the substrate and the carrier such that the accumulation of the electrically conductive material and the at least one electrical contact are situated opposite and at a distance from one another, wherein the electrically conductive adhesive forms a mechanical and electrical connection between the accumulation of the electrically conductive material and the at least one electrical contact, and wherein an interspace between the at least one accumulation of the electrically conductive material and the at least one electrical contact is filled with the electrically conductive adhesive.

Electrical device

An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.

Optoelectronic semiconductor device with first and second optoelectronic elements

An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.

Optoelectronic device including a shielding cap and methods for operating and fabricating an optoelectronic device

A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

Semiconductor light source, operating method and spectrometer

An optoelectronic semiconductor component may include at least one optoelectronic semiconductor chip, a reflector, a lens, and a connecting layer. The reflector may have a reflector recess where the semiconductor chip may be arranged. The lens may be fully located in the reflector recess, and the lens may have a lens recess. The connecting layer may fasten the lens on the reflector. The lens may have a lens outer side facing toward a reflector inner wall of the reflector recess. A gap may be between the reflector and the lens, and the gap may be filled only partially with the connecting layer. The semiconductor chip may not touch the lens. The optoelectronic semiconductor component may be incorporated into a biometric sensor.

Optoelectronic semiconductor component and biometric sensor

In one embodiment of the invention, the semiconductor laser () comprises a semiconductor layer sequence (). The semiconductor layer sequence () contains an n-type region (), a p-type region () and an active zone () lying between the two. A laser beam is produced in a resonator path (). The resonator path () is aligned parallel to the active zone (). In addition, the semiconductor laser () contains an electrical p-contact () and an electrical n-contact () each of which is located on the associated region () of the semiconductor layer sequence () and is configured to input current directly into the associated region (). The n-contact () extends from the p-type region () through the active zone () and into the n-type region () and is located, when viewed from above, next to the resonator path ().

Semiconductor laser and method for producing a semiconductor laser

The invention relates to an optoelectronic component comprising

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic component including a first optoelectronic semiconductor chip configured to emit light includes a wavelength from an infrared spectral range, and a second optoelectronic semiconductor chip configured to emit light including a wavelength from a visible spectral range, wherein the optoelectronic component includes a reflector body including a top side and an underside, the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity.

Optoelectronic component and method of operating an optoelectronic component

In one embodiment of the invention, the semiconductor laser () comprises a semiconductor layer sequence (). The semiconductor layer sequence () contains an n-type region (), a p-type region () and an active zone () lying between the two. A laser beam is produced in a resonator path (). The resonator path () is aligned parallel to the active zone (). In addition, the semiconductor laser () contains an electrical p-contact () and an electrical n-contact () each of which is located on the associated region () of the semiconductor layer sequence () and is configured to input current directly into the associated region (). A p-contact surface () is electrically connected to the p-contact (), and an n-contact surface () is electrically connected to the n-contact () such that the p-contact surface () and the n-contact surface () are configured for external electrical and mechanical connection of the semiconductor laser (). The contact surfaces () are oriented parallel to a growth direction (G) of the semiconductor layer sequence (). The semiconductor laser () can be surface-mounted without wires.

Semiconductor laser and semiconductor laser arrangement

The invention relates to a structural component which comprises a support (), an optoelectronic semiconductor chip () having at least one lateral face (), further comprising a connecting means (), a first molded element (), and a second molded element (), the optoelectronic semiconductor chip () being mechanically connected to the support () by the connecting means (). The first molded element () covers an exposed outer face of the optoelectronic semiconductor chip () and the first molded element () covers an exposed outer face of the connecting means (). The second molded element () covers an exposed outer face of the first molded element () and the second molded element () has a higher modulus of elasticity at room temperature than the first molded element.

Growing community of inventors

Neumarkt, Germany

Thomas Kippes