Semiconductor Components Industries, LLC

Thomas Keena

Ali Salih

Mingjiao Liu

Francine Y Robb

John Michael Parsey, Jr

Ki Chang

Gordon M Grivna

George Chang

Sudhama C Shastri

David M Heminger

Masafumi Uehara

Osamu Ishimaru

Daniel R Heuttl

A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the region of semiconductor material extend outward from a lower surface of the tub structure. In some embodiments, the plurality of structures comprises a plurality of free-standing structures. A conductive material is disposed within the tub structure and laterally surrounding the plurality of structures. In one embodiment, the contact structure facilitates the fabrication of a monolithic series switching diode structure having a low-resistance substrate contact.

Monolithic series switching semiconductor device having low-resistance substrate contact structure and method

In one embodiment, a semiconductor device may include a first transistor having a first current carrying electrode, a second current carrying electrode, and a control electrode; a first bipolar transistor having a collector coupled to the first current carrying electrode of the first transistor, a base coupled to the second current carrying electrode of the first transistor, and an emitter of the first bipolar transistor coupled to a first node of the semiconductor device. In an embodiment, the first node is connected to a terminal of a semiconductor package. An embodiment may include a semiconductor component coupled between the base of the first bipolar transistor and the emitter of the second bipolar transistor.

Method of forming a semiconductor device and structure therefor

In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.

Two terminal multi-channel ESD device and method therefor

In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

Method of forming low capacitance ESD device and structure therefor

Two terminal low capacitance multi-channel ESD device

In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.

Multi-channel ESD device and method therefor

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Chandler, AZ, United States of America

Thomas Keena