Applied Materials, Inc.

Applied Matrials, Inc.

Thomas Joseph Kropewnicki

John Patrick Holland

Meihua Shen

Andreas Goebel

Claes H Bjorkman

Raymond Hoiman Hung

Hongqing Shan

Theodoros Panagopoulos

Jeremiah T Pender

Nicolas Gani

Gregory L Wojcik

Henry Fong

Eric Perozziello

Wilfred Pau

Charles Peter Auglis

Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.

Patterning 3D features in a substrate

Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.

Method for etching having a controlled distribution of process results

A substrate cleaning method comprises exposing a substrate to an energized process gas to remove residue 60 and resist material from the substrate In one version, the process gas comprises cleaning gas, such as an oxygen-containing gas, and an additive gas, such as NH . In one version, the process gas is introduced to remove residue and resist material from the substrate and to remove residue from surfaces in the process chamber

Substrate cleaning process

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San Mateo, CA, United States of America

Thomas Joseph Kropewnicki