Robert Boschgmbh

Infineon Technologies Ag

Thomas Jacke

Christian Pluntke

Joachim Joos

Martin Rambach

Timm Hoehr

Michael Grieb

Holger Heinisch

Christian Foerster

Ning Qu

Wolfgang Feiler

Frank Wolter

Rainer Topp

Holger Ruething

Werner Schiemann

Christian Tobias Banzhaf

Guenther Koffler

Shike Hu

A vertical SiC MOSFET having a source terminal, a drain terminal, and a gate region, as well as an epitaxial layer disposed between the source terminal and the drain terminal and having a doping of a first type, is furnished, a horizontally extending intermediate layer, which has regions having a doping of a second type different from the doping of a first type, being embedded into the epitaxial layer. The vertical SiC MOSFET is notable for the fact that at least the regions having doping of a second type are electrically conductively connected to the source terminal. The gate region can be disposed in a gate trench.

Vertical SiC MOSFET

A device for current sensing of a power transistor system having a power transistor, a first series circuit which includes a first transistor and a first resistance, the first resistance disposed in a load circuit of the first transistor, a second series circuit which has a second transistor and a second resistance disposed in a load circuit of the second transistor, the first series circuit, the second series circuit and the power transistor situated in parallel with one another, the first resistance connected to the first transistor in an electrically conductive manner when the first transistor is switched on, and the second resistance connected to the second transistor in an electrically conductive manner when the second transistor is switched on, and a gate terminal of the first transistor is connected in an electrically conductive manner to a gate terminal of the power transistor when the power transistor is switched on.

Method and device for current sensing of small currents

A transistor, including a substrate of a first doping type; an epitaxy layer of the first doping type above the substrate; a channel layer of a second doping type, differing from the first doping type, above the epitaxy layer; a plurality of trenches in the channel layer, which have a gate electrode situated below the trenches and are bordered by a source terminal of the first doping type above the channel layer; a plurality of shielding areas of the second doping type, which are situated below the gate electrode. The shielding areas are guided below the trenches together in a interconnection of shielding areas, and several shielding areas are jointly guided to terminals for contacting the shielding areas.

Semiconductor transistor having superlattice structures

An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.

SiC trench transistor and method for its manufacture

A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated gate electrode, whose emitter terminals are connected in a first region via a first conductive layer to at least one output terminal and whose emitter terminals are connected in a second region via a second conductive layer to at least one sensor terminal, which is situated outside of a first cell region boundary, which encloses the transistor cells of the first region and the second region, a trench structure belonging to the first cell region boundary being developed between the transistor cells of the second region and the sensor terminal.

Semiconductor system for a current sensor in a power semiconductor

An electrical circuit device includes a semiconductor component which has power terminals and a control terminal electrically insulated from the power terminals, for applying a control voltage, and a control terminal contact surface for contacting the control terminal for measuring the electrical behavior of the semiconductor component. A connection device is provided, via which the control terminal is electrically connectable to a series device, the connection device being transferable from a nonconductive state into a conductive state, in which the control terminal is connected to the series device.

Circuit device having a semiconductor component

A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.

Power switch component having improved temperature distribution

A circuit configuration for switching current flow through an ignition coil, in which the switching process is able to be executed by at least one first transistor that is controllable by a control signal which is able to be supplied via a control signal input of the circuit configuration, and the control signal input is connected to at least one variable resistor.

Growing community of inventors

Tuebingen, Germany

Thomas Jacke