University of Illinois

Starfire Industries LLC

Thomas J Houlahan, Jr

J Gary Eden

Brian Edward Jurczyk

Clark J Wagner

Robert Andrew Stubbers

Paul A Tchertchian

Dane J Sievers

Benben Li

Ivan Shchelkanov

Ian F Haehnlein

Daniel P Menet

Sung-Jin Park

James M Potter

Zhen Dai

A system is described that includes a sputter target and a magnetic element array including multiple sets of magnets arranged to have a Hall-Effect region that extends along a length of the sputter target. The elongated sputtering electrode material tube is interposed between the magnetic array and an object to be deposited with a sputtered material from the sputter target. During a direct current high-power impulse magnetron sputtering operation, the system performs a depositing on a surface of the object by generating and controlling an ion and neutral particle flux by: providing a vacuum apparatus containing a sputter target holder electrode; first generating a high-power pulsed plasma magnetron discharge with a high-current negative direct current (DC) pulse to the sputter a target holder electrode; and second generating a configurable positive voltage kick pulse to the sputter target holder electrode after terminating the negative DC pulse.

Method and apparatus for metal and ceramic nanolayering for accident tolerant nuclear fuel, particle accelerators, and aerospace leading edges

A system and associated method are described for depositing high-quality films for providing a coating on a three-dimensional surface such as an internal surface of a bellows structure. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.

System for coupling RF power into LINACs and bellows coating by magnetron sputtering with kick pulse

A system and associated method are described for depositing high-quality films for providing a nanolayered coating on a three-dimensional surface. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.

Compact system for coupling RF power directly into RF linacs

A system for injecting radio frequency (RF) pulses into an RF linear accelerator (RF LINAC) cavity is described. In accordance with the description an RF power amplifying element, typically a compact planar triode (CPT), is directly mounted to an outside of a hermetically sealed RF cavity. The direct mounting of the RF power amplifying element places the antenna&#x2014;responsible for coupling power into the RF cavity&#x2014;physically on the RF cavity side of a hermetic high-voltage (HV) break. The RF input, RF circuitry, biasing circuitry, and RF power amplifier are all outside of the vacuum cavity region. The direct mounting arrangement facilitates easy inspection and replacement of the RF power amplifier, the RF input and biasing circuitry. The direct mounting arrangement also mitigates the deleterious effects of multipactoring associated with placing the RF power amplifier and associated RF circuitry in the vacuum environment of the RF LINAC cavity.

Compact system for coupling RF power directly into RF LINACS

The invention provides methods and systems for water dissociation with microplasma generated in microchannel plasma arrays or chips. Preferred methods and systems introduce water vapor into a microchannel plasma array. Electrical power is applied to the microchannel plasma array to create a plasma chemical reaction of the water vapor in the microchannel plasma array. Dissociated hydrogen and/or oxygen gas is collected at an output of the microchannel plasma array. The water vapor can be entrained in a carrier gas, but is preferably introduced without carrier gas. Direct introduction of water vapor has been demonstrated to provide efficiencies at an above 60%. The use of carrier gas reduces efficiency, but still exceeds efficiencies of prior methods discussed in the background.

Efficient dissociation of water vapor in arrays of microchannel plasma devices

Logic devices are provided in multiple sub-collector and sub-emitter microplasma devices formed in thin and flexible, or inflexible, semiconductor materials. Logic operations are provided with one of a plurality of microplasmas forming sub-collectors with a common emitter, or a common collector plasma with a plurality of sub-emitter regions in a solid state semi-conductor pn-junction, and generating a logic output from an electrode, based upon electrode inputs to two other electrodes.

Logic function generation from single microplasma transistor devices and arrays of devices

A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials.

Hybrid plasma-semiconductor transistors, logic devices and arrays

Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.

Flexible and on wafer hybrid plasma-semiconductor transistors

Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). Doped solid state semiconductor regions are in a thin flexible solid state substrate, and a flexible non conducting material defining a microcavity adjacent the semiconductor regions. The flexible non conducting material is bonded to the thin flexible solid state substrate, and at least one electrode is arranged with respect to said flexible substrate to generate a plasma in said microcavity, where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions. A preferred on-wafer device is formed on a single side of a silicon on insulator wafer and defines the collector (plasma cavity), emitter and base regions on a common side, which provides a simplified and easy to manufacture structure. A preferred embodiment array of flexible hybrid plasma transistors of the invention is an n+pn PBJT fabricated between two flexible sheets. One or both of the flexible sheets is transparent. The overall array structure is planar, and the planarized structure is sealed between the two flexible sheets. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display.

Growing community of inventors

Urbana, IL, United States of America

Thomas J Houlahan, Jr