Nexperia B.v.

Thomas Igel-Holtzendorff

Tim Boettcher

Reza Behtash

Hans-Martin Ritter

Wolfgang Schnitt

Steffen Holland

Zhihao Pan

Tobias Sprogies

Jochen Wynants

Joachim Utzig

Jan Philipp Fischer

Linpei Zhu

A semiconductor device and method of manufacturing a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a semiconductor layer located on the substrate; at least one shallow trench and at least one deep trench. Each of the at least one shallow trench and the at least one deep trench extending from a first major surface of the semiconductor layer. Sidewall regions and base regions of the trenches comprise a doped trench region and the trenches are at least partially filled with a conductive material contacting the doped region. The shallow trenches terminate in the semiconductor layer and the deep trench terminates in the semiconductor substrate.

Multi-trench semiconductor device and method of manufacture thereof

A semiconductor arrangement comprising a substrate having a first trench formed therein, a field plate layer arranged to extend within the first trench and coat the first trench, the field plate layer having a thickness such that it defines a second trench within the first trench, a barrier layer arranged to coat an internal surface of the second trench; and a trench fill material configured to substantially planarize the first and second trenches.

Semiconductor arrangement

A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.

Semiconductive device and associated method of manufacture

An integrated diode () comprising a substrate (); a Schottky cell () on the substrate (); a heterojunction cell () on the substrate (); a common anode contact () for both the Schottky cell () and the heterojunction cell (); and a common cathode contact () for both the Schottky cell () and the heterojunction cell ().

Semiconductor device

Growing community of inventors

Hamburg, Germany

Thomas Igel-Holtzendorff