Cymer, Inc.

Carl Zeiss Industrielle Messtechnik Gmbh

Thomas Hofmann

Palash P Das

Alexander Igorevich Ershov

Richard L Sandstrom

Richard C Ujazdowski

Robert A Shannon

William N Partlo

Tom A Watson

R Kyle Webb

Herve A Besaucele

Toshihiko Ishihara

James K Howey

Richard M Ness

Richard G Morton

Peter Clarke Newman

Thomas Patrick Duffey

Daniel Anthony Rothweil

Jean-Marc Hueber

Bruce D Johanson

Jesse D Davis

Igor Vladimirovich Fomenkov

Eckehard D Onkels

Kurt Brenner

John T Melchior

Paul C Melcher

Guenter Grupp

Robert G Ozarski

Paul S Thompson

David Wayne Myers

Vladimir B Fleurov

Timothy S Dyer

Gamaralalage G Padmabandu

Curtis L Rettig

German E Rylov

Alex P Ivaschenko

Paolo Zambon

Frederick A Palenschat

Berthold Matzkovits

Brian Strate

Daniel J Reiley

James J Ferrell

Michael D Altheim

Joerg Walther

Gang Lei

Otto Boucky

Ernst Stump

Michael Hoell

Steven F Haas

Christopher R Remen

Chris R Remen

A thin beam laser crystallization apparatus for selectively melting a film deposited on a substrate is disclosed having a laser source producing a pulsed laser output beam, the source having an oscillator comprising a convex reflector and a piano output coupler; and an optical arrangement focusing the beam in a first axis and spatially expanding the beam in a second axis to produce a line beam for interaction with the film.

Device and method to create a low divergence, high power laser beam for material processing applications

A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.

Systems and methods for implementing an interaction between a laser shaped as line beam and a film deposited on a substrate

An apparatus and method is disclosed which may comprise a high power excimer or molecular fluorine gas discharge laser DUV light source system which may comprise: a pulse stretcher which may comprise: an optical delay path mirror, an optical delay path mirror gas purging assembly which may comprise: a purging gas supply system directing purging gas across a face of the optical delay line mirror. The optical delay path mirror may comprise a plurality of optical delay path mirrors; the purging gas supply system may direct purging gas across a face of each of the plurality of optical delay line mirrors. The purging gas supply system may comprise: a purging gas supply line; a purging gas distributing and directing mechanism which may direct purging gas across the face of the respective optical delay path mirror.

High power excimer laser with a pulse stretcher

A beam mixer for increasing intensity symmetry along a selected axis of a beam (wherein the beam extends from a first edge to a second edge along the axis) is disclosed and may include a plurality of mirrors establishing a spatially inverting path. For the beam mixer, the inverting path may have a beginning and an end and may be characterized in that a part of the beam near the first beam edge at the beginning of the path translates to the second beam edge at the end of the path. For this aspect, the beam mixer may further include an optic dividing the beam into first and second beam portions, the optic placing the first portion onto the inverting path and recombining the first and second portions onto a common path after the first portion has traveled along the inverting path thereby mixing the beam.

Device and method to stabilize beam shape and symmetry for high energy pulsed laser applications

A gas discharge laser system producing a laser output pulse and a method of operating such a system is disclosed which may comprise a pulse stretcher which may comprise a laser output pulse optical delay initiating optic directing a portion of the laser output pulse along a laser system output pulse optical axis and diverting a portion of the output pulse into an optical delay having an optical delay path and which may comprise a plurality of confocal resonators in series aligned to deliver an output of the optical delay to the laser output pulse optical delay initiating optic; an optical axis alignment mechanism comprising an radial mirror positioning mechanism operable to position the output of the optical delay to the align with the portion of the laser output pulse transmitted along the optical axis of the portion of the laser system output pulse transmitted by the laser output pulse optical delay initiating optic.

Confocal pulse stretcher

A long pulse pulse power system for gas discharge lasers. The system includes a sustainer capacitor for accepting a charge from a high voltage pulse power source. A peaking capacitor with a capacitance value of less than half the sustainer capacitance provides the high voltage for the laser discharge.

Long-pulse pulse power system for gas discharge laser

Systems and methods are disclosed for focusing a beam for an interaction with a film deposited on a substrate wherein the focused beam defines a short axis and a long axis. In one aspect, the system may include a detecting system to analyze light reflected from the film on an image plane to determine whether the beam is focused in the short axis at the film. In still another aspect, a system may be provided for positioning a film (having an imperfect, non-planar surface) for interaction with a shaped line beam.

Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate

The present invention provides gas discharge laser systems capable of reliable long-term operation in a production line capacity at repetition rates in the range of 6,000 to 10,0000 pulses power second. Preferred embodiments are configured as KrF, ArF and Flasers used for light sources for integrated circuit lithography. Improvements include a modified high voltage power supply capable for charging an initial capacitor of a magnetic compression pulse power system to precise target voltages 6,000 to 10,0000 times per second and a feedback control for monitoring pulse energy and determining the target voltages on a pulse-by-pulse basis. Several techniques are disclosed for removing discharge created debris from the discharge region between the laser electrodes during the intervals between discharges. In one embodiment the width of the discharge region is reduced from about 3 mm to about 1 mm so that a gas circulation system designed for 4,000 Hz operation could be utilized for 10,000 Hz operation. In other embodiments the gas flow between the electrodes is increased sufficiently to permit 10,000 Hz operation with a discharge region width of 3 mm. To provide these substantial increased gas flow rates, Applicants have disclosed preferred embodiments utilize tangential forms of the prior art but with improved and more powerful motors and novel bearing designs. New bearing designs include both ceramic bearings and magnetic bearings. In other embodiments, some or all of the gas circulation power is provided with a blower located outside the laser chamber. The outside blower can be located in the laser cabinet or in separate location.

Six to ten KHz, or greater gas discharge laser system

The present invention provides an injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 to 10 mJ or greater for integrated outputs of about 20 to 40 Watts or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The parameters chamber can be controlled separately permitting optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment is a F laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In this preferred embodiment, both of the chambers and the laser optics are mounted on a vertical optical table within a laser enclosure. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is operated with a fluorine partial pressure and total gas pressure within specified ranges in order to reduce the intensity of the weak line to less than 0.01% of the strong line. Therefore, the need for line selection optical equipment is avoided.

Two chamber F2 laser system with F2 pressure based line selection

A long pulse power system for gas discharge lasers. The system includes a sustainer capacitor for accepting a charge from a high voltage pulse power source. A peaking capacitor with a capacitance value of less than half the sustainer capacitance provides the high voltage for the laser discharge.

A feedthrough structure of a gas discharge laser chamber conducts electric power through the wall of a sealed gas enclosure to a single piece elongated electrode inside the enclosure. The feedthrough structure includes a single piece integrated main insulator larger than the electrode. The main insulator is compressed between the electrode and the wall of the enclosure. The surfaces forming interfaces between the electrode and the single piece insulator are the insulator and the wall are all very smooth to permit the parts to expand and contract as the chamber temperature varies. The feedthrough structure also provides mechanical support and alignment for the electrode and includes seals to prevent gas leakage around the feedthrough structure.

Laser chamber insulator with sealed electrode feedthrough

A simple, reliable, easy to use method for calculating bandwidth data of very narrow band laser beams based on bandwidth data obtained with a spectrometer in circumstances where the laser bandwidths are not large compared to the slit function of the spectrometer. The slit function of the spectrometer is determined. Spectral data of the laser beam is measured with the spectrometer to produce a measured laser beam spectrum which represents a convolution of the laser beam spectrum and the spectrometer slit function. This measured laser spectrum is then mathematically convolved with the slit function of the spectrometer to produce a doubly convolved spectrum. Bandwidth values representing true laser bandwidths are determined from measured laser spectrum and the doubly convolved spectrum. Preferably the true laser bandwidths are calculated by determining the difference between &ldquo;twice a measured laser bandwidth&rdquo; and a corresponding &ldquo;doubly convolved bandwidth&rdquo;. This method provides an excellent estimate of the true laser bandwidth because &ldquo;twice the measured laser bandwidth&rdquo; represents two laser bandwidths and two spectrometer slit function bandwidths and the &ldquo;doubly convolved bandwidth&rdquo; represents one laser bandwidth and two spectrometer slit function bandwidths. Thus, the difference is a representation of the true laser bandwidth. In a preferred embodiment the bandwidth parameters measured are the full width half-maximum bandwidth and the 95% integral bandwidth.

Convolution method for measuring laser bandwidth

A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse energies in the range of about 2 mJ to 5 mJ or greater with a full width half, maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 &mgr;m (100 nm) or less. Replaceable modules include a laser chamber; a modular pulse power system; and a line narrowing module. For a given laser power output, the higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.

ArF laser with low pulse energy and high rep rate

A tunable injection seeded very narrow band F lithography laser. The laser combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam operated in a first gain medium which beam is used to stimulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers are used to narrow band an F laser and the output of the seed laser is amplified in an F amplifier.

Very narrow band injection seeded F2 lithography laser

Growing community of inventors

San Diego, CA, United States of America

Thomas Hofmann