Micron Technology Incorporated

Infineon Technologies Ag

Qimonda Ag

Siemens Aktiengesellschaft

Other

Ps4 Luxco S.a.r.l.

Infineon Technologies LLC

Infineon Technology Ag

Infienon Technologies Ag

Polaris Innovations Limited

Thomas Hein

Martin Brox

Michael Dieter Richter

Wolfgang Anton Spirkl

Peter Mayer

Stefan Dietrich

Patrick Heyne

Thilo Marx

Torsten Partsch

Markus Balb

Christian Weis

Aaron John Nygren

Natalija Jovanovic

Timothy Mowry Hollis

Christoph Bilger

Ronny Schneider

Peter Gregorius

Peter Schr&ouml;gmeier

Peter Schroegmeier

Michael Markert

Martin Maier

Michael Bernhard Sommer

Heinz Hoenigschmid

Sabine Kieser

Walter L Moden

David K Ovard

Roy Edgar Greeff

Rex Kho

Steffen Buch

Otto Schumacher

Peter Schrogmeier

Sabine Schoniger

Hermann Ruckerbauer

Paul Wallner

Johannes Stecker

Thilo Schaffroth

Andreas Schneider

Sabine Sch&ouml;niger

Andre Schaefer

Peter Schrögmeier

Phillip A Rasmussen

Andreas Täuber

Ralf Schedel

Dominique Savignac

Christian Sichert

Aaron Nygren

Casto Salobrena Garcia

Mani Balakrishnan

Musa Saglam

Andrea Sorrentino

Marx Thilo

Sabine Sch&ouml;niger Kieser

Martin Bach

Methods, systems, and devices for voltage overshoot mitigation at a device are described. The device may include a first driver circuit configured to generate data symbols on a transmission line and may include a second driver circuit configured to pre-emphasize the data symbols on the transmission line. The device may include a first inductor and a second inductor in series with the transmission line. A conductive line may couple the second driver circuit with a node, of the transmission line, that is between the first inductor and the second inductor.

Mitigating voltage overshoot at a transmission line

Methods, systems, and devices for multi-voltage operation for driving a multi-mode channel are described. A transmitting device and a receiving device may be coupled via a channel, and the channel may support multiple modes such as a terminated mode and an unterminated mode. A driver may be coupled with the channel, and a voltage supply for the driver may be adjusted based on the mode of the channel, such as based on whether the channel is terminated or unterminated. Adjusting the voltage supply may result in similar or otherwise desirable voltage levels on the channel for each mode of the channel.

Multi-voltage operation for driving a multi-mode channel

Methods, systems, and devices for memory operations are described. A first code for detecting one or more errors in a first set of bits of data and a second code for detecting one or more errors in a second set of bits of data may be generated. The first set of bits and the second set of bits may be transmitted over a channel between a memory device and a host device in an interleaved pattern. The first code and the second code may also be transmitted over the channel. The first set of bits and the second set of bits may be deinterleaved by the receiving device. The first set of bits and the second set of bits may also be processed by the receiving device using the first code and the second code.

Interleaved codeword transmission for a memory device

Methods, systems, and devices for memory operations that support configuring a channel, such as a command/address (C/A) channel, are described. A configuration of a C/A channel may be dynamically adapted based on power saving considerations, control information execution latency, or both. Configuring a C/A channel may include determining a quantity of pins, or a quantity of cycles, both for communicating control information over the C/A channel. The quantity of pins may be determined based on previous control information transmissions, characteristics of a memory device, or predicted control information transmissions, or any combination thereof in some cases. The determined quantity of pins, quantity of cycles, or both may be explicitly or implicitly indicated to other devices (e.g., that use the C/A channel).

Configuring command/address channel for memory

Methods, systems, and devices for link evaluation for a memory device are described. A memory device may receive signaling over a channel and may identify logic values encoded into the signaling based on sampling the signaling against a reference voltage. The sampling may occur at a reference time within a sampling period. To evaluate a quality (e.g., margin of error) of the channel, the memory device may adjust the reference voltage, the reference time, or both, and either the memory device or the host device may determine whether the memory device is still able to correctly identify logic values encoded into signaling over the channel. In some cases, the channel quality may be evaluated during a refresh cycle or at another opportunistic time for the memory device.

Link evaluation for a memory device

Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

Channel modulation for a memory device

Systems may include a central processing unit (CPU), a graphics processing unit (GPU), or a field programmable gate array (FPGA), or any combination thereof. At least one memory device may be connected to the CPU, the GPU, or the FPGA. The memory device(s) may include a device substrate including a microelectronic device and bond pads coupled with an active surface of the device substrate. A package substrate may be secured to the device substrate, the package substrate configured to route signals to and from the bond pads. A ball grid array may be supported on the package substrate. Each ball of the ball grid array positioned and configured to carry one of a high-bandwidth data signal or a high-frequency clock signal may be located only diagonally adjacent to any other balls of the ball grid array configured to carry another of a high-bandwidth data signal or a high-frequency clock signal.

Apparatuses including ball grid arrays and associated systems

Methods, systems, and devices for error detection, error correction, and error management by memory devices are described. Programmable thresholds are configured for a memory device based on a type of data or a location of stored data, among other aspects. For example, a host device configures a threshold quantity of errors for data at a memory device. When retrieving the data, the memory device tracks or counts errors in the data and determine whether the threshold has been satisfied. The memory device transmits (e.g., to the host device) an indication whether the threshold has been satisfied, and the system performs functions to correct the errors and/or prevent further errors. The memory device also identifies errors in received commands or identifies errors introduced in data after the data was received (e.g., using an error detecting code associated with a command or bus).

Dynamic control of error management and signaling

Methods, systems, and devices for controlled and mode-dependent heating of a memory device are described. In various examples, a memory device or an apparatus that includes a memory device may have circuitry configured to heat the memory device. The circuitry configured to heat the memory device may be activated, deactivated, or otherwise operated based on an indication of a temperature (e.g., of the memory device). In some examples, activating or otherwise operating the circuitry configured to heat the memory device may be based on an operating mode (e.g., of the memory device), which may be associated with certain access operations or operational states (e.g., of the memory device). Various operations or operating modes (e.g., of the memory device) may also be based on indications of a temperature (e.g., of the memory device).

Controlled heating of a memory device

Methods, systems, and devices for drive strength calibration for multi-level signaling are described. A driver may be configured to have an initial drive strength and to drive an output pin of a transmitting device toward an intermediate voltage level of a multi-level modulation scheme, where the output pin is coupled with a receiving device via a channel. The receiving device may generate, and the transmitting device may receive, a feedback signal indicating a relationship between the resulting voltage of the channel and an value for the intermediate voltage level. The transmitting device may determine and configure the driver to use an adjusted drive strength for the intermediate voltage level based on the feedback signal. The driver may be calibrated (e.g., independently) for each intermediate voltage level of the multi-level modulation scheme. Further, the driver may be calibrated for the associated channel.

Drive strength calibration for multi-level signaling

Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

Transmission failure feedback schemes for reducing crosstalk

Methods, systems, and devices for bit and signal level mapping are described to enable a memory device to transmit or receive a multi-symbol signal that includes more than two (2) physical levels. Some cyclic redundancy check (CRC) calculations generate one or more bits of CRC output per symbol of an associated signal and the output is transmitted via a multi-symbol signal by converting one or more CRC output bit to a physical level of the signal. The conversion, or mapping, process is performed such that the physical levels of the signal avoid a transition between a highest physical level and lowest physical level. For example, a modulation scheme or mapping process is configured to map different values of CRC output bits to different physical levels, where the different physical levels are separated by one other physical level associated with the signal or the modulation scheme.

Bit and signal level mapping

Methods, systems, and devices for interrupt signaling for a memory device are described. A memory device may transmit an interrupt signal to a host device to alter a sequence of operations that would otherwise be executed by the host device. The memory device may transmit the interrupt signal in response to detecting an error condition at the memory device, a performance degradation at the memory device, or another trigger event. In some examples, the memory device may include a dedicated interrupt pin for transmitting interrupt signals. Alternatively, the memory device may transmit interrupt signals via a pin also sued to transmit error detection codes. For example, the memory device may transmit an interrupt signal before or after an error detection code or may invert the error detection code to indicate the interrupt, in which case the inverted error detection code may act as an interrupt signal.

Interrupt signaling for a memory device

Methods, systems, and devices for tracking a reference voltage (also referred to as V) after boot-up are described. For example, a host device or a memory device may determine a temperature value associated with the memory device. The host device or the memory device may select a reference voltage offset value for the memory device based on mapping the temperature value associated with the memory device to a relationship between reference voltage offset values and temperature differential values associated with the memory device. The host device or the memory device may adjust a reference voltage value associated with the memory device based on the reference voltage offset value. The host device, or the memory device, may operate the memory device in accordance with the reference voltage value based on adjusting the reference voltage value.

Tracking a reference voltage after boot-up

Methods, systems, and devices for operating memory cell(s) using adapting the current on a channel are described. A current on a channel may be adapted during a transition period between signaling a first logic value over the channel and signaling a second (e.g. subsequent) logic value over the channel. Adapting the current may include increasing or decreasing the current on the channel during the transition period. The degree of adaptation may be based on a difference between the first logic value and the subsequent logic value. In some cases, a logic circuit may be configured to determine a difference between the first and subsequent logic value. The logic circuit may be further configured to communicate the difference to an adaptive driver. And the adaptive driver may adapt a current of the channel based on the communicated difference.

Adapting channel current

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Munich, Germany

Thomas Hein