Tokyo Electron Limited

Thomas Hamelin

Jay R Wallace

Arthur Laflamme

Arthur H Laflamme, Jr

Yuji Tsukamoto

Paul Moroz

Martin Kent

Yasuhisa Kudo

Gregory R Whyman

H Steven Tomozawa

Sam Yong Kim

A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.

Reduced maintenance chemical oxide removal (COR) processing system

A high throughput processing system having a chemical treatment system and a thermal treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in the chemical treatment system.

High throughput processing system for chemical treatment and thermal treatment and method of operating

A high throughput thermal treatment system for processing a plurality of substrates is described. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in a dry, non-plasma environment.

High throughput thermal treatment system and method of operating

A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.

Post-etch treatment system for removing residue on a substrate

A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

Gas distribution system for a post-etch treatment system

A substrate holder () for supporting a substrate (). A heating component () is positioned adjacent to a supporting surface and between the supporting surface and a cooling component (). A fluid gap is positioned between the cooling component and the heating component, the fluid gap configured to receive a fluid to increase thermal conduction between the cooling component and the heating component. A brazing material is disposed between the cooling component and the heating component, the brazing material disposed adjacent to the fluid gap.

Substrate holder having a fluid gap and method of fabricating the substrate holder

A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

Processing system and method for chemically treating a substrate

A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

Processing system and method for treating a substrate

A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

A dual chamber apparatus including a first chamber and a second chamber which is configured to be coupled to the first chamber at an interface. Each of the first chamber and the second chamber has a transfer opening located at the interface. An insulating plate is located on one of the first chamber and the second chamber at the interface and is configured to have a low thermal conductivity such that the first chamber and the second chamber can be independently controlled at different temperatures when the first chamber and the second chamber are coupled together. Additionally, the apparatus may include an alignment device and/or a fastening device for fastening the first chamber to the second chamber. In embodiments, the insulating plate may be constructed of Teflon. Further, the first chamber may be a chemical oxide removal treatment chamber and the second chamber may be a heat treatment chamber.

Method and apparatus for thermally insulating adjacent temperature controlled processing chambers

A processing system for thermally treating a substrate including a temperature controlled thermal treatment chamber and a temperature controlled substrate holder for supporting a substrate for thermal treatment. The substrate holder is thermally insulated from the thermal treatment chamber. A method for thermally treating a substrate is also provided.

Processing system and method for thermally treating a substrate

A substrate holder for supporting a substrate, including an exterior supporting surface, a cooling component, a heating component positioned adjacent to the supporting surface and between the supporting surface and the cooling component, and a contact volume positioned between the heating component and the cooling component, and formed by a first internal surface and a second internal surface. The thermal conductivity between the heating component and the cooling component is increased when the contact volume is provided with a fluid.

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Georgetown, MA, United States of America

Thomas Hamelin